Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 105. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.
The 2023 Boyer Lecture series is called 'The Atomic Revolution' and is presented by Professor Michelle Simmons AO, a pioneer in atomic electronics and global leader in quantum computing.READ
CQC2T Director Professor Michelle Simmons AO and Chief Investigator Professor Yuerui (Larry) Lui were recognised in the prestigious 2023 Prime Minister’s award ceremony held at Parliament House last nREAD
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Engineers show that a jellybean-shaped quantum dot creates more breathing space in a microchip packed with qubits.READ