Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-based NIR photodetectors based on this property but with low detection efficiencies. Here, we investigate the differences between the optical and photocurrent properties of Au-hyperdoped Si. Although defects introduced during fabrication of these materials may not exhibit significant optical absorption, we show that they can produce a measurable photocurrent under NIR illumination. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials is yet to be achieved and we discuss these opportunities in light of our results. This work thus represents a step forward in demonstrating the viability of using impurity-hyperdoped Si materials for NIR photodetection.