Publication

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

14/08/2018

SD Liles, R Li, C H Yang, FE Hudson, M Veldhorst, AS Dzurak, AR Hamilton

Nature Communications, 9, 3255 (2018)

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed understanding of the spin and orbital states. Here we show a planar silicon metal-oxide-semiconductor-based quantum dot device and demonstrate operation down to the last hole. Magneto-spectroscopy studies show magic number shell filling consistent with the Fock–Darwin states of a circular two-dimensional quantum dot, with the spin filling sequence of the first six holes consistent with Hund’s rule. Next, we use pulse-bias spectroscopy to determine that the orbital spectrum is heavily influenced by the strong hole–hole interactions. These results provide a path towards scalable silicon hole-spin qubits.

University: UNSW Sydney

Authors Centre Participants: Dr. Henry Yang, Dr. Fay E. Hudson, Prof. Andrew S. Dzurak, SD Liles, R Li, M Veldhorst, AR Hamilton

Source: Nature Communications

Publication Type: Refereed Journal article

DOI Link: DOI Link

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