The advanced nanoscale integration available in CMOS technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multigate designs. We show that quantum dots formed in a CMOS nanowire device can be measured with a remote single electron transistor (SET) formed in an adjacent nanowire, via floating coupling gates. By biasing the SET nanowire with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling control of all quantum dots in a 2 X 2 array, and charge sensing down to the last electron in each dot. We use effective mass theory to investigate the ideal geometrical parameters in order to achieve interdot tunnel rates required for spin-based quantum computation.
The 2023 Boyer Lecture series is called 'The Atomic Revolution' and is presented by Professor Michelle Simmons AO, a pioneer in atomic electronics and global leader in quantum computing.READ
CQC2T Director Professor Michelle Simmons AO and Chief Investigator Professor Yuerui (Larry) Lui were recognised in the prestigious 2023 Prime Minister’s award ceremony held at Parliament House last nREAD
An international team of researchers has developed a technology that has shattered a world record in continuous variable quantum teleportation. This latest technology offers a viable pathway enroute tREAD
Fault-tolerant, error-corrected quantum computation is commonly acknowledged to be crucial to the realisation of large-scale quantum algorithms that could lead to extremely impactful scientific or comREAD
Engineers show that a jellybean-shaped quantum dot creates more breathing space in a microchip packed with qubits.READ