Quantum Processor Development Program

Led by Professor Lloyd Hollenberg, Deputy Director of CQC²T, the Quantum Processor Development Program’s objective is to develop comprehensive theoretical descriptions of quantum information processing and the development of related quantum technology applications. The program pays particular attention to the silicon and phosphorus quantum devices, and all facets of their operation relevant to the Centre goals. The Quantum Processor Development Program spans research from the consideration of quantum information processing, architectures and quantum error correction focusing on Centre spin-qubit hardware, to the application of quantum sensing techniques to the characterisation of silicon-based devices and related applications, as well as control techniques to improve quantum gate operation.

People

Prof. Lloyd C.L.   Hollenberg

Prof. Lloyd C.L. Hollenberg

Program Manager
Mr. David  Broadway

Mr. David Broadway

PhD Student
Mr. Gary  Mooney

Mr. Gary Mooney

PhD Student
Dr. Muhammad  Usman

Dr. Muhammad Usman

Research Fellow
Dr. Nikolai  Dontschuk

Dr. Nikolai Dontschuk

Research Fellow
Mr. Roland  Szymanski

Mr. Roland Szymanski

Technical Services Manager
Ms. Rose  Cooney

Ms. Rose Cooney

Node Administrator
Mr. Sarama  Tonetto

Mr. Sarama Tonetto

PhD Student
Mr. Scott  Lillie

Mr. Scott Lillie

PhD Student
Mr. Spiro  Gicev

Mr. Spiro Gicev

PhD Student
Mr. Yi Zheng  Wong

Mr. Yi Zheng Wong

Masters Student

Featured publications

Apparent delocalization of the current density in metallic wires observed with diamond nitrogen-vacancy magnetometry J.-P. Tetienne, N. Dontschuk, D. A. Broadway, S. E. Lillie, T. Teraji, D. A. Simpson, A. Stacey, and L. C. L. Hollenberg Phys. Rev. B, 99, 014436 (2019)
Nonvanishing effect of detuning errors in dynamical-decoupling-based quantum sensing experiments J. E. Lang, T. Madhavan, J.-P. Tetienne, D. A. Broadway, L. T. Hall, T. Teraji, T. S. Monteiro, A. Stacey, and L. C. L. Hollenberg
Phys. Rev. A, 99, 012110 (2019)
Giant, Anomalous Piezoimpedance in Silicon-on-insulator H. Li, C.T.K. Lew, B.C. Johnson, J.C. McCallum, S. Arscott, and A.C.H. Rowe
Phys. Rev. Applied , 11, 044010 (2019)
Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources Alastair Stacey Nikolai Dontschuk Jyh‐Pin Chou David A. Broadway Alex K. Schenk Michael J. Sear Jean‐Philippe Tetienne Alon Hoffman Steven Prawer Chris I. Pakes Anton Tadich Nathalie P. de Leon Adam Gali Lloyd C. L. Hollenberg Advanced Materials Interfaces, 6, 1801449 (2019)
Two-electron spin correlations in precision placed donors in silicon MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, TF Watson, WJ Baker, LCL Hollenberg, MY Simmons
Nature Communications, 9, 980 (2018)
Quantum probe hyperpolarisation of molecular nuclear spins Broadway, DA; Tetienne, JP; Stacey, A; Wood, JDA; Simpson, DA; Hall, LT; Hollenberg, LCL
Nature Communications, 9, 1246 (2018)
Spatial mapping of band bending in semiconductor devices using in situ quantum sensors Broadway, DA, Dontschuk, N, Tsai, A, Lillie, SE, Lew, CTK, McCallum, JC, Johnson, BC, Doherty, MW, Stacey, A, Hollenberg, LCL, Tetienne, JP
Nature Electronics, 1, 502 (2018)
Magnetically sensitive nanodiamond-doped tellurite glass fibers YL Ruan, DA Simpson, J Jeske, H Ebendorff-Heidepriem, DWM Lau, H Ji, BC Johnson, T Ohshima, VS Afshar, LCL Hollenberg, AD Greentree, TM Monro, BC Gibson
Scientific Reports, 8, 1268 (2018)
Proximity-Induced Artefacts in Magnetic Imaging with Nitrogen-Vacancy Ensembles in Diamond JP Tetienne, DA Broadway, SE Lillie, N Dontschuk, T Teraji, LT Hall, A Stacey, DA Simpson, LCL Hollenberg Sensors, 18, 1290 (2018)
Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon Lew, CTK, Johnson, BC, McCallum, JC
Journal of Applied Physics, 124, 125701 (2018)
High precision single qubit tuning via thermo-magnetic field control David A. Broadway, Scott E. Lillie, Nikolai Dontschuk, Alastair Stacey, Liam T. Hall, Jean-Philippe Tetienne, and Lloyd C. L. Hollenberg
Appl. Phys. Lett., 112, 103103 (2018)
Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds RG Ryan, A Stacey,KM O'Donnell, T Ohshima, BC Johnson, LCL Hollenberg, P Mulvaney, DA Simpson
ACS Applied Materials & Interfaces, 10, 13143 (2018)
Measurements and atomistic theory of electron g-factor anisotropy for phosphorus donors in strained silicon M. Usman, H. Huebl, A. R. Stegner, C. D. Hill, M. S. Brandt, and L. C. L. Hollenberg
Phys. Rev. B, 98, 035432 (2018)
Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond Tetienne, JP; de Gille, RW; Broadway, DA; Teraji, T; Lillie, SE; McCoey, JM; Dontschuk, N; Hall, LT; Stacey, A; Simpson, DA; Hollenberg, LCL
Phys. Rev. B, 97, 085402 (2018)
Magnetic noise from ultrathin abrasively deposited materials on diamond Scott E. Lillie, David A. Broadway, Nikolai Dontschuk, Ali Zavabeti, David A. Simpson, Tokuyuki Teraji, Torben Daeneke, Lloyd C. L. Hollenberg, and Jean-Philippe Tetienne Phys. Rev. Materials, 2, 116002 (2018)