The Silicon Qubit Environment & Interface Program, led by Professor Sven Rogge at UNSW Sydney, aims to couple qubits in a robust manner from the atomic nano-meter length scale to macroscopic coupling via photons.

On the atomic scale we optimise the coupling between donor atoms while taking the complex nature of their charge density in silicon into account. To achieve macroscopic coupling we engineer electric-dipole coupling to spin qubits.

This enables direct qubit-qubit coupling at the 100nm length scale and the coupling to microwave resonators that allows for chip scale coupling.

Finally, an optical interface to spin qubits is investigated for long distance coupling based on rare-earth ions in silicon and integrated single-photon detectors in collaboration with ANU, Griffith, RMIT, and UNSW Canberra.

Featured publications

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Single site optical spectroscopy of coupled Er3+ ion pairs in silicon GC Hu, RL Ahlefeldt, GG de Boo, A Lyasota, BC Johnson, JC McCallum, MJ Sellars, CM Yin, S Rogge Quantum Science and Technology, 7, 025019 (2022)
Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon GC Hu, GG de Boo, BC Johnson, JC McCallum, MJ Sellars, CM Yin, S Rogge Nano Letters, 22, 396 (2022)
Novel characterization of dopant-based qubits B Voisin, J Salfi, R Rahman, S Rogge MRS Bulletin (2021)
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits ZN Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer NPJ Quantum Information, 7, 54 (2021)
Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson Physical Review Materials, 5, 014601 (2021)
Valley interference and spin exchange at the atomic scale in silicon B Voisin, J.Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, MY Simmons, LCL Hollenberg, S Rogge Nature Communications, 11, 6124 (2020)