Silicon Qubit Environment & Interface Program

The Silicon Qubit Environment & Interface Program, led by Prof Sven Rogge at UNSW Sydney, aims to couple qubits in a robust manner from the atomic nano-meter length scale to macroscopic coupling via photons. On the atomic scale we optimise the coupling between donor atoms while taking the complex nature of their charge density in silicon into account. To achieve macroscopic coupling we engineer electric-dipole coupling to spin qubits. This enables direct qubit-qubit coupling at the 100nm length scale and the coupling to microwave resonators that allows for chip scale coupling. Finally, an optical interface to spin qubits is investigated for long distance coupling based on rare-earth ions in silicon and integrated single-photon detectors in collaboration with ANU, Griffith, RMIT, and UNSW Canberra.


Learn more about The Quantum Interface Development Program, CQC2T and the team's research investigating spin qubits in silicon.


Prof. Sven  Rogge

Prof. Sven Rogge

Work Package Leader
Dr. Benoit  Voisin

Dr. Benoit Voisin

Research Fellow
Dr. Cassandra  Chua

Dr. Cassandra Chua

Research Fellow
Dr. Gabriele  De Boo

Dr. Gabriele De Boo

Research Fellow
Mr. Guangchong  Hu

Mr. Guangchong Hu

PhD Student
Mr. Ian  Berkman

Mr. Ian Berkman

PhD Student
Dr. Sacha  Kocsis

Dr. Sacha Kocsis

Research Fellow

Featured publications

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor J Heijden, T Kobayashi, MG House, J Salfi, S Barraud, R Laviéville, MY Simmons, S Rogge Science Advances, 4, eaat9199 (2018)
Single-Shot Single-Gate rf Spin Readout in Silicon P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, and M. Y. Simmons Physical Review X, 8, 041032 (2018)
Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, LCL Hollenberg, R Rahman, S Rogge Physical Review X, 8, 031049 (2018)
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, MY Simmons, LCL Hollenberg, S Rogge, R Rahman Physical Review B, 97, 195301 (2018)
Entanglement control and magic angles for acceptor qubits in Si JC Abadillo-Uriel, J Salfi, XD Hu, S Rogge, MJ Calderon, D Culcer Applied Physics Letters, 113, 012102 (2018)
Gigahertz Single-Electron Pumping Mediated by Parasitic States A Rossi, J Klochan, J Timoshenko, FE Hudson, M Mottonen, S Rogge, AS Dzurak, V Kashcheyevs, GC Tettamanzi Nano Letters, 18 (2018)