Si-MOS quantum dots are a complementary technology to the ion implanted phosphorus donor qubits that are one focus of CQC²T and also act as a ‘test bed’ to assess the potential of silicon spin qubit systems in general.
Silicon Metal-Oxide-Semiconductor (Si-MOS) Quantum dots are fabricated using similar materials and manufacturing processes (known as CMOS technology) as conventional transistors, which number in their billions on every computer chip.
In CQC²T we use Si-MOS quantum dots as sensing devices, known as Single Electron Transistors (SETs), to enable quantum state read out of implanted P-atom spin qubits. In addition, quantum dots are being explored as quantum interconnect devices to connect distant P-atom qubits.
Si-MOS quantum dots can also be operated as spin qubits themselves and can be used to understand the decoherence processes that P-atom qubits will face in future silicon quantum computer architectures.
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