Precision Qubit Processor Program

The Precision Qubit Processor Program led by Professor Michelle Y. Simmons has the ultimate goal of developing a scalable, phosphorus in silicon, quantum processor. Professor Simmons’s group leads the field internationally in making precision atomic electronic devices in silicon for both conventional and quantum computing. Using a combination of scanning tunneling microscopy and molecular beam epitaxy phosphorus dopant atoms are controllably placed in Si devices with atomic precision. This has led to the development of the narrowest conducting wires in silicon, the development of the smallest precision transistors, the first two qubit gate between atom qubits in silicon and more complex architectures towards error correction. The Program is currently developing all the functional elements for an error corrected scalable spin-based quantum computer, including techniques for multiplexed parallel qubit addressability, 3D atomic precision patterning, fast gate-based read-out, and both error detection and correction.


Dr. Andrey  Timofeev

Dr. Andrey Timofeev

Research Fellow
Mr. Daniel  Keith

Mr. Daniel Keith

PhD Student
Mr. Felix  Krauth

Mr. Felix Krauth

PhD Student
Ms. Georgina  Carson

Ms. Georgina Carson

PhD Student
Ms. Helen  Geng

Ms. Helen Geng

PhD Student
Ms. Jane  Qian

Ms. Jane Qian

PhD Student
Mr. Ludwik  Kranz

Mr. Ludwik Kranz

PhD Student
Mr. Mark  Hogg

Mr. Mark Hogg

PhD Student
 Matthew  Donnelly

Matthew Donnelly

PhD Student
Mr. Michael  Jones

Mr. Michael Jones

PhD Student
Dr. Otte  Homan

Dr. Otte Homan

Laboratory Manager
Mr. Prasanna  Pakkiam

Mr. Prasanna Pakkiam

PhD Student
Dr. Rodrigo  Ormeno

Dr. Rodrigo Ormeno

Laboratory Manager
Dr. Sebastian  Knauer

Dr. Sebastian Knauer

Research Fellow
Dr. Yousun  Chung

Dr. Yousun Chung

Research Fellow
Dr. Yu  He

Dr. Yu He

Research Fellow

Featured publications

A two-qubit gate between phosphorus donor electrons in silicon Y. He, S. K. Gorman, D. Keith, L. Kranz, J. G. Keizer & M. Y. Simmons Nature, 571, p371 (2019)
Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor M Koch, JG Keizer, P Pakkiam, D Keith, MG. House, E Peretz & MY Simmons Nature Nanotechnology, 14, 137 (2019)
Two-electron spin correlations in precision placed donors in silicon MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, TF Watson, WJ Baker, LCL Hollenberg, MY Simmons
Nature Communications, 9, 980 (2018)
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor J Heijden, T Kobayashi, MG House, J Salfi, S Barraud, R Laviéville, MY Simmons, S Rogge Science Advances, 4, eaat9199 (2018)
Addressable electron spin resonance using donors and donor molecules in silicon SJ. Hile, L Fricke, MG. House, E Peretz, CY Chen, Y Wang, M Broome, SK. Gorman, JG. Keizer, R Rahman, MY Simmons Science Advances, 4, eaaq1459 (2018)
Spin-orbit coupling in silicon for electrons bound to donors B Weber, YL Hsueh, TF Watson, RY Li, AR Hamilton, LCL Hollenberg, R Rahman, MY Simmons npj Quantum Information, 4, 61 (2018)
Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot SK Gorman, MA Broome, MG House, SJ Hile, JG Keizer, D Keith, TF Watson, WJ Baker, MY Simmons
Appl. Phys. Lett., 112, 243105 (2018)
Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon P Pakkiam, MG House, M Koch, MYS Simmons Nano Letters, 18, 4081 (2018)
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, MY Simmons, LCL Hollenberg, S Rogge, R Rahman Physical Review B, 97, 195301 (2018)
Single-Shot Single-Gate rf Spin Readout in Silicon P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, and M. Y. Simmons Physical Review X, 8, 041032 (2018)
Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, LCL Hollenberg, R Rahman, S Rogge Physical Review X, 8, 031049 (2018)