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Measurements and atomistic theory of electron g-factor anisotropy for phosphorus donors in strained silicon

28/07/2018

M. Usman, H. Huebl, A. R. Stegner, C. D. Hill, M. S. Brandt, and L. C. L. Hollenberg

Phys. Rev. B, 98, 035432 (2018)

Measurements and atomistic theory of electron g-factor anisotropy for phosphorus donors in strained silicon

This work reports the measurement of electron g-factor anisotropy (|Δg|=|g001g1¯10|) for phosphorous donor qubits in strained silicon (sSi = Si/Si1xGex) environments. Multimillion-atom tight-binding simulations are performed to understand the measured decrease in |Δg| as a function of x, which is attributed to a reduction in the interface-related anisotropy. For x<7%, the variation in |Δg| is linear and can be described by ηxx, where ηx1.62×103. At x=20%, the measured |Δg| is 1.2±0.04×103, which is in good agreement with the computed value of 1×103. When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on |Δg|. Our results provide useful insights on the spin properties of sSi:P for spin qubits, and more generally for devices in spintronics and valleytronics areas of research.

University: University of Melbourne

Authors Centre Participants: Dr. Muhammad Usman, Dr. Charles Hill, Prof. Lloyd C.L. Hollenberg, H. Huebl, A. R. Stegner, M. S. Brandt

Source: Physical Review B

Publication Type: Refereed Journal article

DOI Link: DOI Link

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