Integrated Silicon Nano-Spintronics Program

The Integrated Silicon Nano-Spintronics Program is led by Professor Andrew Dzurak. Based within the School of Electrical Engineering at UNSW Sydney.

The Program provides the Centre with engineering design, modelling and nanofabrication of fully-configured silicon spin qubits, constructed using top-down nanofabrication.

The Program researchers make extensive use of the Australian National Fabrication Facility (ANFF) at UNSW Sydney, of which Prof Dzurak is Director, and works closely with the Scale-Up Engineering Program, the Directed Ion Implantation Program, and the Silicon Quantum Hardware program.

People

Prof. Andrew S. Dzurak Executive Team, Program Manager UNSW Sydney
Dr. Kok Wai Chan Senior Research Fellow UNSW Sydney
Mr. Jesus Cifuentes Pardo PhD Student UNSW Sydney
Ms. Alexandra Dickie Laboratory Technician UNSW Sydney
Dr. Chris Escott Senior Research Fellow UNSW Sydney
Mr. MengKe Feng PhD Student UNSW Sydney
Mr. William Gilbert PhD Student UNSW Sydney
Mr. Kevin Guo PhD Student UNSW Sydney
Ms. Ingvild Hansen PhD Student UNSW Sydney
Mr. Jonathan Huang PhD Student UNSW Sydney
Dr. Fay E. Hudson Senior Research Fellow UNSW Sydney
Dr. Wee Han Lim Research Fellow UNSW Sydney
Dr. Andre Saraiva Research Fellow UNSW Sydney
Ms. Amanda Seedhouse PhD Student UNSW Sydney
Mr. Santiago Serrano Ramirez PhD Student UNSW Sydney
Mr. Yue (Rocky) Su PhD Student UNSW Sydney
Dr. Tuomo Tanttu Research Fellow UNSW Sydney
Mr. Ensar Vahapoglu PhD student UNSW Sydney
Mr. Zeheng Wang PhD Student UNSW Sydney
Dr. Henry Yang Senior Research Fellow UNSW Sydney

Featured publications

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Fast Bayesian Tomography of a Two-Qubit Gate Set in Silicon TJ Evans, W Huang, J Yoneda, R Harper, T Tanttu, KW Chan, FE Hudson, KM Itoh, A Saraiva, CH Yang, AS Dzurak, SD Bartlett Physical Review Applied, 17, 024068 (2022)

Scaling silicon-based quantum computing using CMOS technology MF Gonzalez-Zalba, S de Franceschi, E Charbon, T Meunier, M Vinet, AS Dzurak Nature Electronics, 4, 872 (2021)

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot SD Liles, F Martins, DS Miserev, AA Kiselev, ID Thorvaldson, MJ Rendell, IK Jin, FE Hudson, M Veldhorst, KM Itoh, TD Ladd, AS Dzurak, AR Hamilton Physical Review B, 104, 235303 (2021)

Pulse engineering of a global field for robust and universal quantum computation I Hansen, AE Seedhouse, A Saraiva, A Laucht, AS Dzurak, CH Yang Physical Review A, 104, 062415 (2021)

Single-electron spin resonance in a nanoelectronic device using a global field E Vahapoglu, JP Slack-Smith, RCC Leon, WH Lim, FE Hudson, T Day, T Tanttu, CH Yang, A Laucht, AS Dzurak, JJ Pla Science Advances, 7, eabg9158 (2021)

A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K JY Huang, WH Lim, RCC Leon, CH Yang, FE Hudson, CC Escott, A Saraiva, AS Dzurak, A Laucht Nano Letters, 21, 6328 (2021)