Ion implantation is the standard technology used in the semiconductor industry to introduce dopants in silicon electronic devices. It is also the technology that underpins the pioneering demonstrations of our spin-based qubits in silicon, while retaining compatibility with standard manufacturing processes.
Ion implanted donor qubit research within CQC²T leads the world in the development of single-atom quantum devices in silicon. The spin of an electron or a nucleus constitutes a natural quantum bit, with two well-defined quantum states and no spurious leakage states. We use such spins to encode and process digital quantum information.
The focus of our activities within CQC²T is the development of methods to scale up implanted donor spin qubits, using deterministic counted single-ion implantation for large qubit arrays, and engineering short, medium and long distance entanglement between the spins.
This requires engineering the interaction between the donors in order to enable entangling multi-qubit logic operations. It also requires a detailed understanding of the noise sources that may affect the quality of the operations.