Tuning the spin state of a single boron atom in silicon by electric field

June 15, 2017 @ 4:00 pm

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The spin degree of freedom of an acceptor in silicon provides an attractive alternative to the well-established donor spin qubit in silicon due to the potential to electrically manipulate the quantum state. Here we discuss the modification of the spin-orbit coupling of a hole trapped by a boron site in a silicon transistor based on electrical field

Details

Date:
June 15, 2017
Time:
4:00 pm

Venue

Newton Building, UNSW
CQC2T Conference Room, Level 2, Newton Building J12, UNSW Kensington Campus NSW Australia

Organizer

University of New South Wales