Transport characteristics of coupled quantum dots prepared on SOI
March 4, 2016 @ 4:00 pm
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Recent progress in qubit operation in isotropically enriched 28Si quantum dots attracted attention since it solved problem of decoherence of qubits. A major remaining issue for practical qubit application is integration technology for multiple qubits. MOS structure is promising for large scale integration.
We have prepared Si coupled quantum dots on silicon-on-insulator (SOI) substrates using electron-beam lithography. Electric transport properties have been measured with various side gate biases. The number of electrons have been observed by charge-sensing single electron transistors. Spin states have been observed by Pauli spin blockade. P-type transport is also discussed.
Shunri Oda received the B. Sc degree in physics, the M. Eng. and Dr. Eng. degree from Tokyo Institute of Technology in 1974, 1976 and 1979, respectively.
He is a Professor in Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology. His current research interests include fabrication of silicon quantum dots by pulsed plasma processes, single electron tunneling devices based on nanocrystalline silicon, ballistic transport in silicon nanodevices, silicon based quantum information devices, and NEMS hybrid devices. He is a Research Leader of MEXT Center of Innovation program. He has authored more than 700 technical papers in international journals and conferences including 200 invited papers. He edited two books (with D. Ferry) “Silicon Nanoelectronics” (CRC Press, 2006) and “Nanoscale Silicon Devices” (CRC Press, 2016)
Prof. Oda is a Fellow of IEEE and Japan Society for Applied Physics, and a member of Electrochemical Society and Materials Research Society. He is a Distinguished Lecturer of IEEE Electron Devices Society.