Taking Hydrogen Resist Lithography to the Third Dimension

21 April, 2016 @ 4:00 pm

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Hydrogen-resist lithography on Si(100) has become a reliable tool to fabricate nano-scale circuits. Traditionally, our devices were constricted to a single 2D plane. Our technique can be adapted to the fabrication in 3D as well. In this talk I will discuss the requirements on alignment and surface quality. Finally, I will present results of two working 3D single electron transistors, one with a top gate and one with an additional single donor tuned by the top gate.

Details

Date:
21 April, 2016
Time:
4:00 pm

Venue

Newton Building, UNSW
CQC2T Conference Room, Level 2, Newton Building J12, UNSW Kensington Campus NSW Australia

Organizer

University of New South Wales