Directed Ion Implantation Program

The Directed Ion Implantation Program employs top-down deterministic methods for making devices by directing single ions to specific locations in silicon substrates that act as atomic qubits. Led by Professor David Jamieson, the research will focus on the development of a process-flow of compatible techniques that can produce scaled-up devices of many donor qubits.  This will lead to practical, experimentally realizable, quantum device prototypes employing one or many atoms.  This builds on the track record of successful single devices that have already demonstrated excellent coherence times for donors in silicon.

Our top-down technique offers a fast-track to arrays of donor qubits for devices in silicon that is compatible with the standard tools of the semiconductor industry.  These arrays will address issues with electron-spin read-out fidelity and quantum coherence stability required for scalability The precision implantation and activation of single ions and the minimisation of implantation-induced defects will help make the vision of CQC²T device architectures feasible. 


Prof. David  N. Jamieson

Prof. David N. Jamieson

Program Manager University of Melbourne
Mr. Alexander  Tsai

Mr. Alexander Tsai

University of Melbourne
Dr. Alexander Malwin  Jakob

Dr. Alexander Malwin Jakob

University of Melbourne
Mr. Aochen  Duan

Mr. Aochen Duan

University of Melbourne
Dr. Brett  Johnson

Dr. Brett Johnson

RMIT University
Mr. Christopher  Lew

Mr. Christopher Lew

University of Melbourne
A. Prof. Jeff  McCallum

A. Prof. Jeff McCallum

University of Melbourne
Mr. Liam  Thomas

Mr. Liam Thomas

University of Melbourne
Ms. Rose  Cooney

Ms. Rose Cooney

Node Administrator University of Melbourne
Mr. Simon  Robson

Mr. Simon Robson

University of Melbourne
Mr. Stephen  Gregory

Mr. Stephen Gregory

University of Melbourne
Mr. Zehai  Pang

Mr. Zehai Pang

University of Melbourne
Mr. Zhaojin  Liu

Mr. Zhaojin Liu

University of Melbourne

Featured publications

Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson Physical Review Materials, 5, 014601 (2021)
High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector SG Robson, AM Jakob, D Holmes, SQ Lim, BC Johnson, DN Jamieson Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 487, 1-7 (2021)
Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device MT Ma̧dzik, A Laucht, FE Hudson, AM Jakob, BC Johnson, DN Jamieson, KM Itoh, AS Dzurak, A Morello Nature Communications, 12, 181 (2021)
Controllable freezing of the nuclear spin bath in a single-atom spin qubit MT Mądzik, TD Ladd, FE Hudson, KM Itoh, AM Jakob, BC Johnson, JC McCallum, DN Jamieson, AS Dzurak, A Laucht, A Morello Science Advances , 6, eaba3442 (2020)
Donor Spins in Silicon for Quantum Technologies A Morello, JJ Pla, P Bertet, DN Jamieson Advanced Quantum Technologies, 2000005 (2020)
Coherent electrical control of a single high-spin nucleus in silicon S Asaad, V Mourik, B Joecker, MAI Johnson, AD Baczewski, HR Firgau, MT Madzik, V Schmitt, JJ Pla, FE Hudson, KM Itoh, JC McCallum, AS Dzurak, A Laucht, A Morello
Nature, 579, 205 (2020)
Coherent control via weak measurements in P-31 single-atom electron and nuclear spin qubits JT Muhonen ,JP Dehollain, A Laucht, S Simmons, R Kalra, FE Hudson, AS Dzurak, A Morello, DN Jamieson, JC McCallum, KM Itoh
Phys. Rev. B, 98, 155201 (2018)
Scalable quantum computing with ion-implanted dopant atoms in silicon Morello, A, Tosi, G, Mohiyaddin, FA, Schmitt, V, Mourik, V, Botzem, T, Laucht, A, Pla, JJ, Tenberg, S, Savytskyy, R, Madzik, M, Hudson, F, Dzurak, AS, Itoh, KM, Jakob, AM, Johnson, BC, McCallum, JC, Jamieson, DN 64th IEEE Annual International Electron Devices Meeting (IEDM) (2018)