The Directed Ion Implantation Program employs top-down deterministic methods for making devices by directing single ions to specific locations in silicon substrates that act as atomic qubits. Led by Professor David Jamieson, the research will focus on the development of a process-flow of compatible techniques that can produce scaled-up devices of many donor qubits. This will lead to practical, experimentally realizable, quantum device prototypes employing one or many atoms. This builds on the track record of successful single devices that have already demonstrated excellent coherence times for donors in silicon.
Our top-down technique offers a fast-track to arrays of donor qubits for devices in silicon that is compatible with the standard tools of the semiconductor industry. These arrays will address issues with electron-spin read-out fidelity and quantum coherence stability required for scalability The precision implantation and activation of single ions and the minimisation of implantation-induced defects will help make the vision of CQC²T device architectures feasible.