Directed Ion Implantation Program

The Directed Ion Implantation Program employs top-down deterministic methods for making devices by directing single ions to specific locations in silicon substrates that act as atomic qubits. Led by Professor David Jamieson, the research will focus on the development of a process-flow of compatible techniques that can produce scaled-up devices of many donor qubits.  This will lead to practical, experimentally realizable, quantum device prototypes employing one or many atoms.  This builds on the track record of successful single devices that have already demonstrated excellent coherence times for donors in silicon.

Our top-down technique offers a fast-track to arrays of donor qubits for devices in silicon that is compatible with the standard tools of the semiconductor industry.  These arrays will address issues with electron-spin read-out fidelity and quantum coherence stability required for scalability The precision implantation and activation of single ions and the minimisation of implantation-induced defects will help make the vision of CQC²T device architectures feasible. 


Prof. David  N. Jamieson

Prof. David N. Jamieson

Program Manager
Mr. Alexander  Tsai

Mr. Alexander Tsai

PhD Student
Dr. Alexander Malwin  Jakob

Dr. Alexander Malwin Jakob

Research Fellow
Mr. Aochen  Duan

Mr. Aochen Duan

PhD Student
Dr. Brett  Johnson

Dr. Brett Johnson

Research Fellow
Mr. Christopher  Lew

Mr. Christopher Lew

PhD Student
Ms. Danielle  Holmes

Ms. Danielle Holmes

PhD Student
A. Prof. Jeff  McCallum

A. Prof. Jeff McCallum

Senior Research Fellow
Mr. Liam  Thomas

Mr. Liam Thomas

Masters Student
Ms. Rose  Cooney

Ms. Rose Cooney

Node Administrator
Mr. Simon  Robson

Mr. Simon Robson

PhD Student
Mr. Stephen  Gregory

Mr. Stephen Gregory

Technical Services Manager
Mr. Zehai  Pang

Mr. Zehai Pang

Masters Student
Mr. Zhaojin  Liu

Mr. Zhaojin Liu

Masters Student

Featured publications

Coherent control via weak measurements in P-31 single-atom electron and nuclear spin qubits JT Muhonen ,JP Dehollain, A Laucht, S Simmons, R Kalra, FE Hudson, AS Dzurak, A Morello, DN Jamieson, JC McCallum, KM Itoh
Phys. Rev. B, 98, 155201 (2018)
Scalable quantum computing with ion-implanted dopant atoms in silicon Morello, A, Tosi, G, Mohiyaddin, FA, Schmitt, V, Mourik, V, Botzem, T, Laucht, A, Pla, JJ, Tenberg, S, Savytskyy, R, Madzik, M, Hudson, F, Dzurak, AS, Itoh, KM, Jakob, AM, Johnson, BC, McCallum, JC, Jamieson, DN 64th IEEE Annual International Electron Devices Meeting (IEDM) (2018)