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Integrated Silicon Nanospintronics
Silicon is an attractive material for the development of spin-based quantum processors because of the long electron spin coherence and spin lifetimes present and also because of the potentially scalability to many-qubit systems, building upon decades of research in the development of highly-scaled integrated circuits.
The Integrated Silicon Nano-Spintronics (ISNS) program, led by Professor Andrew Dzurak, focuses on engineering design, modeling, nanofabrication and measurement of fully-configured Si:P spin qubits and associated pathway devices. The team makes extensive use of the Australian National Fabrication Facility (ANFF) at UNSW for device fabrication and maintains close links with leading international groups in silicon nanoelectronics and spintronics. Within the Centre the ISNS team collaborates with Professor David Jamieson and colleagues at the University of Melbourne for the configuration of P-ion implanted qubit devices. The group also collaborates closely with Dr Andrea Morello and his team in the area of quantum device measurement and spin control.
The team’s development of a MOS-compatible Al multi-layer gating technology has been a critical step in the development of a fully MOS spin qubit architecture in recent years. This technology has been successfully applied to the production of a range of devices which delivered significant research milestones over the past few years, including fully tuneable Si quantum dot devices which have been operated in the single electron limit, transport devices in which tunnelling through single-P-donor states has been studied and spin qubit devices in which single shot spin readout has been demonstrated. The latter marks a major milestone in the development of a Si quantum computer.