Tuning the spin state of a single boron atom in silicon by electric field

Speaker: 
Mr Guangchong Hu
From: 
CQC2T at UNSW
When: 
4pm Thursday 15 June 2017
Where: 
CQC2T Conference Room, Level 2, Newton Building J12, UNSW Kensington Campus

The spin degree of freedom of an acceptor in silicon provides an attractive alternative to the well-established donor spin qubit in silicon due to the potential to electrically manipulate the quantum state. Here we discuss the modification of the spin-orbit coupling of a hole trapped by a boron site in a silicon transistor based on electrical field