Centre Related Publications

Journal Articles


[1] A Tight-Binding Study of Single-Atom Transistors, H. Ryu, S. Lee, M. Fuechsle, J.A. Miwa, S. Mahapatra, S and L.C.L. Hollenberg, M.Y. Simmons and G. Klimeck, Small 11, 374 (2015).

[2] Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, J.A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J.A. Miwa, G. Klimeck, M.Y. Simmons and S. Rogge , Applied Physics Letters 106, 203110 (2015).

[3] Strain and electric field control of hyperfine interactions for donor spin qubits in silicon, M. Usman, C.D. Hill, R. Rahman, G. Klimeck, M.Y. Simmons, S. Rogge and L.C.L. Hollenberg, Physical Review B 91, 245209 (2015).

[4] The impact of dopant segregation on the maximum carrier density in Si:P multilayers, J.G. Keizer , S.R. McKibbin and M.Y. Simmons , American Chemical Society Nano 9, 7080 (2015).

[5] Bottom-up assembly of metallic germanium, G. Scappucci, W.M. Klesse, L.A. Yeoh, D.J. Carter, O. Warschkow, N.A. Marks, D.L. Jaeger, G. Capellini, M.Y. Simmons and A.R. Hamilton, Scientific Reports 5, 12948 (2015).

[6] Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, S.J. Hile, M.G. House, E. Peretz, J. Verduijn, D. Widmann, T. Kobayashi, S. Rogge and M.Y. Simmons, Applied Physics Letters 107, 93504 (2015).

[7] Impact of nuclear spin dynamics on electron transport through donors, S.K. Gorman, M.A. Broome, W.J. Baker and M.Y. Simmons, Physical Review B 92, 125413 (2015).

[8] A surface code quantum computer in silicon, C. Hill, E. Peretz, S. Hile, M. Fuechsle, M.H. House, R. Rahman, G. Klimeck, S. Rogge, M.Y. Simmons and L.C.L. Hollenberg, Science Advances 1, e1500707 (2015).

[9] A new horizon for quantum information, M.Y. Simmons, Nature Quantum Information (editoral) 1, 15013 (2015).

[10] High-fidelity rapid initialization and read-out of an electron spin via the single donor D− charge state, T.F. Watson, B. Weber, M.G. House, H. Büch and M.Y. Simmons, Physical Review Letters 115, 166806 (2015).

[11] Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots, M.G. House, T. Kobayashi, B. Weber, S.J. Hile, T.F. Watson, J. van der Heijden, S. Rogge and M.Y. Simmons, Nature Communications 6, (2015).

[12] Spin blockade and exchange in coulomb-confined silicon double quantum dots, B. Weber, Y.H.M. Tan, S. Mahapatra, T.F. Watson, H. Ryu. R. Rahman, L.C.L. Hollenberg, G. Klimeck and M.Y. Simmons, Nature Nanotechnology 9, 430 (2014).

[13] Single-charge detection by an atomic precision tunnel junction, M.G. House, E. Peretz, J.G. Keizer, S.J. Hile and M.Y. Simmons, Applied Physics Letters 104, 113111 (2014).

[14] Spatially resolving valley quantum interference of a donor in silicon, J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg and S. Rogge, Nature Materials 13, 605 (2014).

[15] Disentangling phonon and impurity interactions in δ-doped Si(001), F. Mazzola, C.M. Polley, J.A. Miwa, M.Y. Simmons and J.W. Wells , Applied Physics Letters 104, 173108 (2014).

[16] Valley splitting in a silicon quantum device platform, J.A. Miwa, O. Warschkow, D.J. Carter, N.A. Marks, F. Mazzola, M.Y. Simmons and J.W. Wells , Nano Letters 14, 1515 (2014).

[17] Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium, S. Shamim, S. Mahapatra, G. Scappucci, W.M. Klesse, M.Y. Simmons and A. Ghosh, Physical Review Letters 112, 236602 (2014).

[18] Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy, L. Oberbeck, T.C.G. Reusch, T. Hallam, S.R. Schofield, N.J. Curson and M.Y. Simmons, Applied Physics Letters 104, 253102 (2014).

[19] Low resistivity, super-saturation phosphorus-in-silicon monolayer doping, S.R. McKibbin, C.M. Polley, G. Scappucci, J.G. Keizer and M.Y. Simmons , Applied Physics Letters 104, 123502 (2014).

[20] Transport in asymmetrically coupled donor-based silicon triple quantum dots, T.F. Watson, B. Weber, J.A. Miwa, S. Mahapatra, R.M.P. Heijnen and M.Y. Simmons , Nano Letters 14, 1830 (2014).

[21] Lithography and doping in strained Si towards atomically precise device fabrication , W.C.T. Lee, N. Bishop, D.L. Thompson, K. Xue, G. Scappucci, J.G. Cederberg, J.K. Gray, S.M. Han, G.K. Celler, M.S. Carroll and M.Y. Simmons, Nanotechnology 25, 145302 (2014).

[22] Determining the electronic confinement of a sub-surface metallic state, F. Mazzola, M. Edmonds, D.J. Carter, N.A. Marks, B.C.C. Cowie, J.A. Miwa, M.Y. Simmons, American Chemical Society Nano 8, 10223 (2014).

[23] Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires, B. Weber, H. Ryu, Y.-H. Matthias Tan, G. Klimeck and M.Y. Simmons, Physical Review Letters 113, 246802 (2014).

[24] Spin-lattice relaxation times of single donors and donor clusters in silicon, Y. Hsueh, H. Buch, Y. Tan, Y. Wang, L.C.L. Hollenberg, G. Klimeck, M.Y. Simmons and R. Rahman, Physical Review Letters 113, 246406 (2014).

[25] Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture, S.R. McKibbin, G. Scappucci, W. Pok and M.Y. Simmons, Nanotechnology 24, 045303 (2013).

[26] Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication, W.C.T. Lee, N. Bishop, D.L. Thompson, K. Xue, G. Scappucci, J.G. Cederberg, J.K. Gray, S.M. Han, G.K. Celler, M.S. Carroll and M.Y. Simmons, Applied Surface Science 265, 833 (2013).

[27] New avenues to an old material: controlled nanoscale doping of germanium, G. Scappucci, G. Capellini, W. Klesse and M.Y. Simmons, Nanoscale 5, 2600 (2013).

[28] Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas, T.Y. Huang, C.T. Liang, Y.F. Chen, M.Y. Simmons, G.H. Kim and D.A. Ritchie, Nanoscale Research Letters 8, 138 (2013).

[29] Atomic layer doping of strained Ge-on-insulator thin films with high electron densities, W.M. Klesse, G. Scappucci, G. Capellini, J.M. Hartmann and M.Y. Simmons, Applied Physics Letters 102, 151103 (2013).

[30] Spin readout and addressability of phosphorus-donor clusters in Silicon, H. Büch, S. Mahapatra, R. Rahman, A. Morello and M.Y. Simmons, Nature Communications 4, 2017 (2013).

[31] Direct measurement of the band structure of a buried two-dimensional electron gas, J.A. Miwa, P. Hofmann, M.Y. Simmons and J.W. Wells, Physical Review Letters 110, 136801 (2013).

[32] Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants, J.A. Mol, J. Salfi, J.A. Miwa, M.Y. Simmons and S. Rogge, Physical Review B 87, 245417 (2013).

[33] Silicon quantum electronics, F.A. Zwanenburg, A.S. Dzurak, A. Morello, M.Y. Simmons, L.C.L. Hollenberg, G. Klimeck, S. Rogge, S.N. Coppersmith and M.A. Eriksson, Reviews Of Modern Physics 85, 961 (2013).

[34] Transport through a single donor in p-type silicon, J.A. Miwa, J. A. Mol, J. Salfi, S. Rogge and M.Y. Simmons, Applied Physics Letters 103, 043106 (2013).

[35] Exploring the limits of N-type ultra-shallow junction formation, C.M. Polley, W.R. Clarke, J.A. Miwa, G. Scappucci, J.W. Wells, D.L. Jaeger, M.R. Bischof, R.F. Reidy, B.P. Gorman and M.Y. Simmons, American Chemical Society Nano 7, 5499 (2013).

[36] Atomistic modeling of metallic nanowires in silicon, H. Ryu, S. Lee, B. Weber, S. Mahapatra, L.C.L Hollenberg, M.Y. Simmons and G. Klimeck, Nanoscale 5, 8666 (2013).

[37] Electronic structure of phosphorus and arsenic delta-doped germanium, D.J. Carter, O. Warschkow, J.D. Gale, G. Scappucci, W.M. Klesse, G. Capellini, A.L. Rohl, M.Y. Simmons, D.R. McKenzie and N.A. Marks, Physical Review B 88, 115203 (2013).

[38] Phosphorus molecules on Ge(001): A playground for controlled n‑Doping of germanium at high densities, G. Mattoni, W.M. Klesse, G. Capellini, M.Y. Simmons and G. Scappucci,, American Chemical Society Nano 7, 11310 (2013).

[39] Ohm’s Law Survives to the Atomic Scale, B. Weber, S. Mahapatra, H. Ryu, S. Lee, A. Fuhrer, T.C.G. Reusch, D.L. Thompson, W.C.T. Lee, G. Klimeck, L.C.L. Hollenberg and M.Y. Simmons, Science 335, 64 (2012).

[40] A single-atom transistor, M. Fuechsle, J.A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L.C.L. Hollenberg, G. Klimeck and M.Y. Simmons, Nature Nanotechnology 7, 242 (2012).

[41] n-Type doping of germanium from phosphine: early stages resolved at the atomic level, G. Scappucci, O. Warschkow, G. Capellini, W.M. Klesse, D.R. McKenzie and M.Y. Simmons, Physical Review Letters 109, 076101 (2012).

[42] Spectroscopy of a deterministic single-donor device in silicon, M. Fuechsle, J.A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L.C.L. Hollenberg, G. Klimeck and M.Y. Simmons, Proceedings Of Spie Quantum Information And Computation X 8400, 8400061 (2012).

[43] Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport, G. Scappucci, W.M Klesse, A.R. Hamilton, G. Capellini, D.L. Jaeger, M.R. Bischof, R.F. Reidy, B.P. Gorman and M.Y. Simmons, Nano Letters 12, 4953 (2012).

[44] Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon, C.M. Polley, W.R. Clarke, J.A. Miwa, M.Y. Simmons and J.W. Wells, Applied Physics Letters 101, 262105 (2012).

[45] Engineering independent electrostatic control of atomic-scale (~4 nm) silicon double quantum dots, B. Weber, S. Mahapatra, T.F. Watson and M.Y. Simmons, Nano Letters 12, 4001 (2012).

[46] Effective mass theory of monolayer δ doping in the high-density limit, D.W. Drumm, L.CL. Hollenberg, M.Y. Simmons and M. Friesen, Physical Review B 85, 155419 (2012).

[47] Dual-temperature encapsulation of phosphorus in germanium δ-layers toward ultra-shallow junctions, G. Scappucci, G. Capellini, W.M. Klesse and M.Y. Simmons, Journal Of Crystal Growth 316, 81 (2011).

[48] Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices, W.M. Klesse, G. Scappucci, G. Capellini and M.Y. Simmons, Nanotechnology 22, 145604 (2011).

[49] A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium, G. Scappucci, G. Capellini, B. Johnston, W.M. Klesse, J.A. Miwa and M.Y. Simmons, Nano Letters 11, 2272 (2011).

[50] Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ layers, S. Shamim, S. Mahapatra, C. Polley, M.Y. Simmons and A. Ghosh, Physical Review B 83, 233304 (2011).

[51] Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers, G. Scappucci, G. Capellini, W.M. Klesse and M.Y. Simmons, Nanotechnology 22, 375203 (2011).

[52] Charge Sensing of Precisely Positioned P Donors in Si, S. Mahapatra, H. Büch and M.Y. Simmons, Nano Letters 11, 4376 (2011).

[53] Electronic structure of realistically extended atomistically resolved disordered Si:P δ-doped layers, S. Lee, H. Ryu, H. Campbell, L.C.L. Hollenberg, M.Y. Simmons, and G. Klimeck, Physical Review B 84, 205309 (2011).

[54] Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements, C.M. Polley, W.R. Clarke and M.Y. Simmons, Nanoscale Research Letters 6, 538 (2011).

[55] Spectroscopy of few-electron single-crystal silicon quantum dots, M. Fuechsle, S. Mahapatra, F.A. Zwanenburg, M. Friesen, M.A. Eriksson and M.Y. Simmons, Nature Nanotechnology 5, 502 (2010).

[56] Development of a tunable donor quantum dot in silicon, W.C.T. Lee, G. Scappucci, D.L. Thompson and M.Y. Simmons, Applied Physics Letters 96, 43116 (2010).

[57] First-principles modelling of scanning tunnelling microscopy using nonequilibrium Green, H. Lin, J.M.C. Rauba, K.S. Thygesen, K.W. Jacobsen, M.Y. Simmons and W.A. Hofer, Frontiers Of Physics In China 5, 369 (2010).

[58] Optimizing dopant activation in Si:P double _-layers, S.R. McKibbin, W.R. Clarke, A. Fuhrer and M.Y. Simmons, Journal Of Crystal Growth 312, 3247 (2010).

[59] Investigating the surface quality and confinement of Si:P delta-layers at different growth temperatures, S.R. McKibbin, W.R. Clarke and M.Y. Simmons, Physica E-low-dimensional Systems & Nanostructures 42, 1180 (2010).

[60] Radio-frequency reflectometry-A fast and sensitive measurement method for two-dimensional systems, L.J. Taskinen, R.P. Starrett, T.P. Martin, J.C.H. Chen, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 42, 1192 (2010).

[61] Atomic-scale all-epitaxial in-plane gated donor quantum dot in silicon, A. Fuhrer, M. Fuechsle, T.C.G. Ruesch, B. Weber and M.Y. Simmons, Nano Letters 9, 707 (2009).

[62] Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices, K.E.J. Goh and M.Y. Simmons, Applied Physics Letters 95, 142104 (2009).

[63] Investigating the regrowth surface of Si:P delta-layers toward vertically stacked three dimensional devices, S.R. Mckibbin, W.R. Clarke, A. Fuhrer, T.C.G. Ruesch and M.Y. Simmons, Applied Physics Letters 95, 233111 (2009).

[64] Aharonov–Bohm oscillations in a nanoscale dopant ring in silicon, T.C.G. Reusch, A. Fuhrer, M. Fuchsle, B. Weber and M.Y. Simmons, Applied Physics Letters 95, 032110 (2009).

[65] Ultra-dense phosphorus in Ge d-layers, G. Scappucci, G. Cappellini, W.C.T. Lee and M.Y. Simmons, Applied Physics Letters 94, 162106 (2009).

[66] Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy, G. Scappucci, G. Cappellini, W.C.T. Lee and M.Y. Simmons, Nanotechnology 20, 495302 (2009).

[67] Influence of encapsulation temperature on Ge:P d-layers, G. Scappucci, G. Cappellini and M.Y. Simmons, Physical Review B 80, 233202 (2009).

[68] Investigating the surface quality and confinement of Si:P δ-layers at different growth temperatures, S.R. McKibbin, W.R. Clarke and M.Y. Simmons, Physica E: Low-dimensional Systems And Nanostructures 42, 1180 (2009).

[69] Aharonov-Bohm oscillations in a nanoscale dopant ring in silicon, T.C.G. Reusch, A. Fuhrer, M. Fuchsle, B. Weber and M.Y. Simmons, Applied Physics Letters 95, 32110 (2009).

[70] Electron-electron interactions in highly disordered two-dimensional systems, K.E.J. Goh, M.Y. Simmons and A.R. Hamilton, Physical Review B 77, 235410 (2008).

[71] Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions, K.E.J. Goh, M.Y. Simmons and A.R. Hamilton, Physical Review B 76, 193305 (2008).

[72] Morphology and electrical conduction of Si:P delta-doped layers on vicinal Si(001), T.C.G. Reusch, K.E.J. Goh, W. Pok, N. Lo, S. McKibbin and M.Y. Simmons, Journal Of Applied Physics 104, 66104 (2008).

[73] Ohmic conduction of sub-10 nm P-doped silicon nanowires at cryogenic temperatures, F.J. Ruess, A.P. Micolich, W. Pok, K.E.J. Goh, A.R. Hamilton and M.Y. Simmons, Applied Physics Letters 92, 52101 (2008).

[74] Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy, F.J. Ruess, G. Scappucci, M. Fuchsle, W. Pok, A. Fuhrer, D.L. Thompson, T.C.G. Reusch and M.Y. Simmons, Physica E 40, 1006 (2008).

[75] Scanning probe spectroscopy: Probing dopants at the atomic level, M.Y. Simmons, Nature Physics 4, 165 (2008).

[76] Atomic scale device fabrication, M.Y. Simmons, F.J. Ruess, K.E.J. Goh, W. Pok, T. Hallam, M.J. Butcher, T.C.G. Reusch, G. Scappucci, A.R. Hamilton and L. Oberbeck, International Journal Of Nanotechnology 5, 352 (2008).

[77] Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal, K.E.J. Goh, Y. Augarten, L. Oberbeck and M.Y. Simmons, Applied Physics Letters 93, 142105 (2008).

[78] Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon, W.R. Clarke, , X.J. Zhou, A. Fuhrer, C. Polley, D.L. Thompson, T.C.G. Reusch and M.Y. Simmons, Physica E: Low-dimensional Systems And Nanostructures 40, 2131 (2008).

[79] The effect of surface proximity on electron transport through ultra-shallow δ-doped layers in silicon, W.R. Clarke, , X.J. Zhou, A. Fuhrer, T.C.G. Reusch and M.Y. Simmons, Physica E: Low-dimensional Systems And Nanostructures 40, 1566 (2008).

[80] 0.7 structure and zero bias anomaly in ballistic hole quantum wires, R. Danneau, O. Klochan, W.R. Clarke, L.H. Ho, A.P. Micolich, M.Y. Simmons, A.R. Hamilton, M. Pepper and D.A. Ritchie, Physical Review Letters 100, 16403 (2008).

[81] 0.7 Structure and zero bias anomaly in one-dimensional hole systems, R. Danneau, O. Klochan, W.R. Clarke, L.H. Ho, A.P. Micolich, M.Y. Simmons, A.R. Hamilton, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 40, 1501 (2008).

[82] Anticrossing of spin-split subbands in quasi-one-dimensional wires, A.C. Graham, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review Letters 100, 226804 (2008).

[83] Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems, L.H. Ho, W.R. Clarke, A.P. Micolich, R. Danneau, O. Klochan, M.Y. Simmons, A.R. Hamilton, M. Pepper and D.A. Ritchie, Physical Review B 77, 201402 (2008).

[84] Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures, C.T. Liang, Y.R. Li, L.H. Lin, P.T. Lin, C.K. Yang, Y.S. Tseng, K.Y. Chen, N.R. Cooper, M.Y. Simmons and D.A. Ritchie, Applied Physics Letters 92, 152117 (2008).

[85] Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal, K.E.J. Goh, Y. Augarten, L. Oberbeck and M.Y. Simmons, Applied Physics Letters 93, 142105 (2008).

[86] Geometric suppression of single-particle energy spacings in quantum antidots, L.C. Bassett, C.P. Michael, C.J.B. Ford, M. Kataoka, C.H.W. Barnes, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 40, 1633 (2008).

[87] Impact of long- and short-range disorder on the metallic behaviour of two-dimensional systems, W.R. Clarke, C.E. Yasin, A.R. Hamilton, A.P. Micolich, M.Y. Simmons, K. Muraki, Y. Hirayama, M. Pepper and D.A. Ritchie, Nature Physics 4, 55 (2008).

[88] Kondo effect from a tunable bound state within a quantum wire, F. Sfigakis, C.J.B. Ford, M. Pepper, M. Kataoka, D.A. Ritchie and M.Y. Simmons, Physical Review Letters 100, 26807 (2008).

[89] Metallic behavior in low-disorder two-dimensional hole systems in the presence of long- and short-range disorder, W.R. Clarke, C.E. Yasin, A.R. Hamilton, A.P. Micolich, M.Y. Simmons, K. Muraki, Y. Hirayama, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 40, 1599 (2008).

[90] Quantum transport in one-dimensional GaAs hole systems, A.R. Hamilton, O. Klochan, R. Danneau, W.R. Clarke, L.H. Ho, A.P. Micolich, M.Y. Simmons, M. Pepper, D.A. Ritchie, K. Muraki and Y. Hirayama, International Journal Of Nanotechnology 5, 318 (2008).

[91] Radio-frequency reflectometry on large gated two-dimensional systems, L.J. Taskinen, R.P. Starrett, T.P. Martin, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, D.A. Ritchie and M. Pepper, Review Of Scientific Instruments 79, 123901 (2008).

[92] Screening long-range Coulomb interactions in 2D hole systems using a bilayer heterostructure, L.H. Ho, W.R. Clarke, R. Danneau, O. Klochan, A.P. Micolich, M.Y. Simmons, A.R. Hamilton, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 40, 1700 (2008).

[93] The 0.7 anomaly in one-dimensional hole quantum wires, A.R. Hamilton, R. Danneau, O. Klochan, W.R. Clarke, A.P. Micolich, L.H. Ho, M.Y. Simmons, D.A. Ritchie, M. Pepper, K. Muraki and Y. Hirayama, Journal Of Physics-condensed Matter 20, 164205 (2008).

[94] The effect of surface proximity on electron transport through ultra-shallow delta-doped layers in silicon, W.R. Clarke, X.J. Zhou, A. Fuhrer, T.C.G. Reusch and M.Y. Simmons, Physica E-low-dimensional Systems & Nanostructures 40, 1566 (2008).

[95] Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon, W.R. Clarke, X.J. Zhou, A. Fuhrer, C. Polley, D.L. Thompson, T.C.G. Reusch and M.Y. Simmons, Physica E-low-dimensional Systems & Nanostructures 40, 2131 (2008).

[96] Surface gate and contact alignment for buried atomically precise STM-patterned devices, M. Fuchsle, F.J. Ruess, T.C.G. Reusch, M. Mitic and M.Y. Simmons, Journal Of Vacuum Science And Technology B 25, 2562 (2007).

[97] Comparison of GaP and PH3 as dopant sources for STM-based device fabrication, K.E.J. Goh, L. Oberbeck, M.J. Butcher, N.J. Curson, F.J. Ruess and M.Y. Simmons, Nanotechnology 18, 65301 (2007).

[98] Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal, T. Hallam, T.C.G. Reusch, L. Oberbeck, N.J. Curson and M.Y. Simmons, Journal Of Applied Physics 101, 34305 (2007).

[99] Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts, T. Hallam, M.J. Butcher, K.E.J. Goh and M.Y. Simmons, Journal Of Applied Physics 102, 34308 (2007).

[100] Single hydrogen atom on the Si(001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.F. Wilson, S.R. Schofield, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Physical Review B 76, 155302 (2007).

[101] Single P and As dopants in the Si(001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.Q. Shi, D.R. McKenzie, S.R. Schofield, N.J. Curson and M.Y. Simmons, Journal Of Chemical Physics 127, 184706 (2007).

[102] Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds, T.C.G. Reusch, M.W. Radny, P.V. Smith, O. Warschkow, N.A. Marks, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Journal Of Physical Chemistry C 111, 6428 (2007).

[103] Doping and STM tip-induced changes to dangling bonds on Si(001), T.C.G. Reusch, O. Warschkow, M.W. Radny, P.V. Smith, N.A. Marks, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Surface Science 601, 4036 (2007).

[104] Structural integrity and transport characteristics of STM-defined highlydoped Si:P nanodots, F.J. Ruess, W. Pok, T.C.G. Reusch, G. Scappucci, M. Fuchsle, M. Mitic, D.L. Thompson and M.Y. Simmons, Journal Of Scanning Probe Microscopy 2, 10 (2007).

[105] Electronic properties of atomically abrupt tunnel junctions in silicon, F.J. Ruess, W. Pok, K.E.J. Goh, A.R. Hamilton and M.Y. Simmons, Physical Review B (rapid Communications) 75, 121303 (2007).

[106] Realization of Atomically Controlled Dopant Devices in Silicon, F.J. Ruess, W. Pok, T.C.G. Reusch, M.J. Butcher, K.E.J. Goh, G. Scappucci, A.R. Hamilton and M.Y. Simmons, Small 3, 563 (2007).

[107] Narrow highly P-doped planar wires in silicon created by scanning probe microscopy, F.J. Ruess, K.E.J. Goh, M.J. Butcher, T.C.G. Reusch, L. Oberbeck, B. Weber, A.R. Hamilton and M.Y. Simmons, Nanotechnology 18, 44023 (2007).

[108] Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices, G. Scappucci, F. Ratto, D.L. Thompson, T.C.G. Reusch, W. Pok, F.J. Ruess, F. Rosei and M.Y. Simmons, Applied Physics Letters 91, 222109 (2007).

[109] Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices, M. Fuechsle, F.J. Rueß, T.C.G. Reusch, M. Mitic and M.Y. Simmons, Journal Of Vacuum Science & Technology B 25, 2562 (2007).

[110] One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy, F.J. Rueß, B. Weber, K.E.J. Goh, O. Klochan, A.R. Hamilton and M.Y. Simmons, Physical Review B: Condensed Matter And Material Physics 76, 085403 (2007).

[111] Electrical Characterization of Ordered Si:P Dopant Arrays, W. Pok, T.C.G. Reusch, G. Scappucci, F.J. Rueß, A.R. Hamilton and M.Y. Simmons, Ieee Transactions On Nanotechnology 6, 213 (2007).

[112] Electrical properties of atomically controlled Si:P nanowires created by scanning probe microscopy, F.J. Rueß, K.E.J. Goh, B. Weber, A.R. Hamilton and M.Y. Simmons, Aip Conference Proceedings 893, 687 (2007).

[113] Atomically Precise Silicon Device Fabrication, M.Y. Simmons, F. J. Rueß, W. Pok, D.L. Thompson, M. Füchsle, G. Scappucci, T.C.G. Reusch, K.E.J. Goh, S.R. Schofield, B. Weber, L. Oberbeck, A.R. Hamilton and F. Ratto, Proceedings Of The 7th Ieee International Conference On Nanotechnology 1, 907 (2007).

[114] Decay of long-lived quantum Hall induced currents in 2D electron systems, T.J. Kershaw, A. Usher, A.S. Sachrajda, J. Gupta, Z.R. Wasilewski, M. Elliott, D.A. Ritchie and M.Y. Simmons, New Journal Of Physics 9, 71 (2007).

[115] Electrical characterization of ordered SiP dopant arrays, W. Pok, T.C.G. Reusch, G. Scappucci, F.J. Ruess, A.R. Hamilton and M.Y. Simmons, Ieee Transactions On Nanotechnology 6, 213 (2007).

[116] Electron heating and current scaling in a GaAs two-dimensional electron system, P.Z. Chen, L.H. Lin, C.T. Liang, J.Y. Lin, J.H. Chen, M.Y. Simmons and D.A. Ritchie, Journal Of The Korean Physical Society 50, 1662 (2007).

[117] Energy-level pinning and the 0.7 spin state in one dimension: GaAs quantum wires studied using finite-bias spectroscopy, A.C. Graham, D.L. Sawkey, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physical Review B 75, 35331 (2007).

[118] Experimental studies of low-field Landau quantization in two-dimensional electron systems in GaAs/AlGaAs heterostructures, J.H. Chen, D.R. Hang, C.F. Huang, T.Y. Huang, J.Y. Lin, S.H. Lo, J.C. Hsiao, M.G. Lin, M.Y. Simmons, D.A. Ritchie and C.T. Liang, Journal Of The Korean Physical Society 50, 776 (2007).

[119] Huge positive magnetoresistance of GaAs/AlGaAs high electron mobility transistor structures at high temperatures, C.C. Wang, C.T. Liang, Y.T. Jiang, Y.F. Chen, N.R. Cooper, M.Y. Simmons and D.A. Ritchie, Applied Physics Letters 90, 252106 (2007).

[120] One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy, F.J. Ruess, B. Weber, K.E.J. Goh, O. Klochan, A.R. Hamilton and M.Y. Simmons, Physical Review B 76, 85403 (2007).

[121] Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions, K.E.J. Goh, M.Y. Simmons and A.R. Hamilton, Physical Review B 76, 193305 (2007).

[122] Anisotropic zeeman splitting in ballistic one-dimensional hole systems, R. Danneau, O. Klochan, W.R. Clarke, L.H. Ho, A.P. Micolich, M.Y. Simmons, A.R. Hamilton, M. Peppers, D.A. Ritchie and U. Zulicke, Physics Of Semiconductors, Pts A And B 893, 699 (2007).

[123] Electrical properties of atomically controlled Si : P nanowires created by scanning probe microscopy, F.J. Ruess, K.E.J. Goh, B. Weber, A.R. Hamilton and M.Y. Simmons, Physics Of Semiconductors, Pts A And B 893, 687 (2007).

[124] Thermodynamic and transport properties of 2D GaAs systems near the apparent metal-insulator transition, E.A. Galaktionov, G. Allison, A.K. Savchenko, S.S. Safonov, M.M. Fogler, M.Y. Simmons and D.A. Ritchie, Physics Of Semiconductors, Pts A And B 893, 591 (2007).

[125] Influence of doping density on electronic transport in degenerate Si:P -doped layers, K.E.J. Goh, L. Oberbeck, M.Y. Simmons, A.R. Hamilton and M.J. Butcher, Physical Review B 73, 35401 (2006).

[126] Importance of charging in atomic resolution scanning tunneling microscopy: Study of a single phosphorus atom in Si (001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.F. Wilson, N.J. Curson, S.R. Schofield, D.R. McKenzie and M.Y. Simmons, Physical Review B 74, 113311 (2006).

[127] Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond, T.C.G. Reusch, N.J. Curson, S.R. Schofield, T. Hallam and M.Y. Simmons, Surface Science Volume 600 Issue 600, 318 (2006).

[128] Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale, S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny, D.R. McKenzie and R.G. Clark, Journal Of Physical Chemistry B 110, 3173 (2006).

[129] Atomic-scale observation and control of the reaction of phosphine with silicon, S.R. Schofield, N.J. Curson, M.Y. Simmons, O. Warschkow, N.A. Marks, H.F. Wilson, and D.R. McKenzie, P.V. Smith and M.W. Radny, Electronic Journal Of Surface Science And Nanotechology 4, 609 (2006).

[130] Thermal dissociation and desorption of PH3 on Si(001): A reinterpretation of spectroscopic data, H.F. Wilson, O. Warschkow, N.A. Marks, N.J. Curson, S.R. Schofield, T.C.G. Reusch, M.R. Radny, P.V. Smith, D.R. McKenzie and M.Y. Simmons, Physical Review B 74, 195310 (2006).

[131] Ballistic transport in one-dimensional bilayer hole systems, R. Danneau, W.R. Clarke, O. Klochan, L.H. Ho, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 34, 550 (2006).

[132] Conductance quantization and the 0.7x2e(2)/h conductance anomaly in one-dimensional hole systems, R. Danneau, W.R. Clarke, O. Klochan, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Applied Physics Letters 88, 12107 (2006).

[133] Effects of interactions and disorder on the compressibility of two-dimensional electron and hole systems, E.A. Galaktionov, G.D. Allison, M.M. Fogler, A.K. Savchenko, S.S. Safonov, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 34, 240 (2006).

[134] Fabrication of induced two-dimensional hole systems on (311)A GaAs, W.R. Clarke, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, K. Muraki and Y. Hirayama, Journal Of Applied Physics 99, 23707 (2006).

[135] Influence of doping density on electronic transport in degenerate Si : P delta-doped layers, K.E.J. Goh, L. Oberbeck, M.Y. Simmons, A.R. Hamilton and M.J. Butcher, Physical Review B 73, 355401 (2006).

[136] New interaction effects in quantum point contacts at high magnetic fields, A.C. Graham, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 34, 588 (2006).

[137] The excitation spectrum of quantum antidots, C.P. Michael, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 34, 195 (2006).

[138] Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition, G. Allison, E.A. Galaktionov, A.K. Savchenko, S.S. Safonov, M.M. Fogler, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 96, 216407 (2006).

[139] Zeeman splitting in ballistic hole quantum wires, R. Danneau, O. Klochan, W.R. Clarke, L.H. Ho, A.P. Micolich, M.Y. Simmons, A.R. Hamilton, M. Pepper, D.A. Ritchie and U. Zulicke, Physical Review Letters 97, 26403 (2006).

[140] Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine, K.E.J. Goh, L. Oberbeck and M.Y. Simmons, Physica Status Solidi A 202, 1002 (2005).

[141] Effective removal of hydrogen resists used to pattern devices using scanning tunnelling microscopy, T. Hallam, F.J. Ruess, N.J. Curson, K.E.J. Goh, L. Oberbeck, M.Y. Simmons and R.G. Clark, Applied Physics Letters 86, 143116 (2005).

[142] The use of etched registration markers to make four terminal electrical contacts to STM-patterned nanostructures, F.J. Ruess, L. Oberbeck, K.E.J. Goh, M.J. Butcher, E. Gauja, A.R. Hamilton and M.Y. Simmons, Nanotechnology 16, 2446 (2005).

[143] Scanning probe microscopy for silicon device fabrication, M.Y. Simmons, F.J. Ruess, K.E.J. Goh, T. Hallam, S.R. Schofield, L. Oberbeck, N.J. Curson , A.R. Hamilton, M.J. Butcher, R.G. Clark and T.C.G. Reusch, Molecular Simulation 31, 505 (2005).

[144] Phosphine adsorption and dissociation on the Si(001) Surface: An Ab Initio survey of structures, O. Warschkow, H.F. Wilson, N.A. Marks, S.R. Schofield, N.J. Curson, P.V. Smith, M.W. Radny, D.R. McKenzie and M.Y. Simmons, Physical Review B 72, 125328 (2005).

[145] Observation of substitutional and interstitial phosphorus on clean Si(100)-(2x1) with scanning tunneling microscopy, G.W. Brown, B.P. Uberuaga, H. Grube, M.E. Hawley, S.R. Schofield, N.J. Curson, M.Y. Simmons and R.G. Clark, Physical Review B: Condensed Matter And Material Physics 72, 195323 (2005).

[146] Towards the routine fabrication of P in Si nanostructures: Understanding P precursor molecules on Si(001), S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny and D.R. McKenzie, Materials Research Society Symposium Proceedings 864, 159 (2005).

[147] STM characterisation of phosphine adsorption on STM-patterned H:Si(001) surfaces, T. Hallam, N.J. Curson, L. Oberbeck and M.Y. Simmons, Proceedings Of The Society Of Photo-optical Instrumentation Engineers (spie) 5650, 172 (2005).

[148] The fabrication of devices in silicon using scanning probe microscopy, F.J. Rueß, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, Proceedings Of The Society Of Photo-optical Instrumentation Engineers (spie) 5649, 306 (2005).

[149] 'Mobility gap' of a spin-split GaAs two-dimensional electron gas, T.Y. Huang, C.P. Huang, Y.H. Chiu, C.T. Liang, M.Y. Simmons and D.A. Ritchie, Microelectronics Journal 36, 466 (2005).

[150] 0.7 Structure in quantum wires observed at crossings of spin-polarised 1D sub bands (vol 22, pg 264, 2004), A.C. Graham, K.J. Thomas, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 25, 683 (2005).

[151] Anomalous spin-dependent behavior of one-dimensional subbands, A.C. Graham, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physical Review B 72, 193305 (2005).

[152] Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel, C.T. Liang, M. Kataoka, G. Faini, D. Mailly, M.Y. Simmons, A.W. Rushforth, C.G. Smith, D.A. Ritchie and M. Pepper, Microelectronics Journal 36, 331 (2005).

[153] Fabrication and characterization of a 2D hole system a in novel (311)A GaAsSISFET, W.R. Clarke, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, K. Muraki and Y. Hirayama, Microelectronics Journal 36, 327 (2005).

[154] Induced currents, frozen charges and the quantum Hall effect breakdown, K.V. Kavokin, M.E. Portnoi, A.J. Matthews, A. Usher, J. Gething, D.A. Ritchie and M.Y. Simmons, Solid State Communications 134, 257 (2005).

[155] Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems, C.E. Yasin, T.L. Sobey, A.P. Micolich, W.R. Clarke, A.R. Hamilton, M.Y. Simmons, L.N. Pfeiffer, K.W. West, E.H. Linfield, M. Pepper and D.A. Ritchie, Physical Review B 72, 241310 (2005).

[156] Interaction effects in high-mobility two-dimensional electron and hole systems, A.K. Savchenko, E.A. Galaktionov, S.S. Safonov, Y.Y. Proskuryakov, L. Li, M. Pepper, M.Y. Simmons, D.A. Ritchie, E.H. Linfield and Z.D. Kvon, Physica Status Solidi B-basic Solid State Physics 242, 1204 (2005).

[157] Observation of substitutional and interstitial phosphorus on clean Si(100)-(2x1) with scanning tunneling microscopy, G.W. Brown, B.P. Uberuaga, H. Grube, M.E. Hawley, S.R. Schofield, N.J. Curson, M.Y. Simmons and R.G. Clark, Physical Review B 72, 195323 (2005).

[158] Fano factor reduction on the 0.7 structure, P. Roche, J. Segala, D.C. Glattli, J.T. Nicholls, M. Pepper, A.C. Graham, K.J. Thomas, M.Y. Simmons and D.A. Ritchie, Noise And Fluctuations 780, 417 (2005).

[159] STM characterisation of phosphine adsorption on STM-patterned H : Si(001) surfaces., T. Hallam, N.J. Curson, L. Oberbeck and M.Y. Simmons, Micro- And Nanotechnology: Materials, Processes, Packaging, And Systems Ii 5650, 172 (2005).

[160] The fabrication of devices in silicon using scanning probe microscopy, R.J. Ruess, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, Smart Structures, Devices, And Systems Ii, Pt 1 And 2 5649, 306 (2005).

[161] Towards the routine fabrication of P in Si nanostructures: Understanding P precursor molecules on Si(001), S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny and D.R. McKenzie, Semiconductor Defect Engineering-materials, Synthetic Structures And Devices 864, 159 (2005).

[162] STM characterisation of the Si-P heterodimer, N.J. Curson, S.R. Schofield, L. Oberbeck, M.Y. Simmons and R.G. Clark, Physical Review B 69, 195303 (2004).

[163] Effect of encapsulation temperature on Si:P -doped layers, K.E.J. Goh, L. Oberbeck, M.Y. Simmons, A.R. Hamilton and R.G. Clark, Applied Physics Letters 85, 4953 (2004).

[164] Measurements of composite fermion conductivity dependence on carrier density, C.T. Lang, M.Y. Simmons, D.A. Ritchie and M. Pepper, Journal Of Physics-condenced Matter 16, 1095 (2004).

[165] Measurement of phosphorus segregation in silicon at the atomic-scale using STM, L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons, R.G. Clark and G. Bilger, Applied Physics Letters 85, 1359 (2004).

[166] STM imaging of buried P atoms in hydrogen terminated Si for the fabrication of a Si:P quantum computer, L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons and R.G. Clark, Thin Solid Films 464, 23 (2004).

[167] Toward atomic-scale device fabrication in silicon using scanning probe microscopy, F.J. Ruess, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, Nano Letters 4, 1969 (2004).

[168] Split-off dimer defects on the Si(001)2x1 surface, S.R. Schofield, N.A. Marks, N.J. Curson, J.L. OBrien, G.W. Brown, M.Y. Simmons, R.G. Clark, M.E. Hawley and H.F. Wilson, Physical Review B 69, 85312 (2004).

[169] Phosphine dissociation pinning on the Si(001) surface, H.F. Wilson, O. Warschkow N.A. Marks, S.R. Schofield, N.J. Curson, P.V. Smith, M.W. Radny, D.R. McKenzie and M.Y. Simmons, Physical Review Letters 93, 226102 (2004).

[170] 0.7 Analogue structures and exchange interactions in quantum wires, A.C. Graham, K.J. Thomas, M. Pepper, M.Y. Simmons, D.A. Ritchie, K.F. Berggren, P. Jaksch, A. Debnarova and I.I. Yakimenko, Solid State Communications 131, 591 (2004).

[171] 0.7 Structure in quantum wires observed at crossings of spin-polarised 1D subbands, A.C. Graham, K.J. Thomas, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 264 (2004).

[172] Can the conductance step of a single-mode ballistic constriction be lower than 2e(2)/h?, C.T. Liang, O.A. Tkachenko, V.A. Tkachenko, D.G. Baksheyev, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 22, 268 (2004).

[173] Equilibrium magnetization measurements of two-dimensional electron systems, A. Usher, M. Zhu, A.J. Matthews, A. Potts, M. Elliott, W.G. Herrenden-Harker, D.A. Ritchie and M.Y. Simmons, Physica E-low-dimensional Systems & Nanostructures 22, 741 (2004).

[174] Evolution of the second lowest extended state as a function of the effective magnetic field in the fractional quantum hall regime, T.M. Chen, C.T. Liang, M.Y. Simmons, D.A. Ritchie and M. Pepper, Chinese Journal Of Physics 42, 307 (2004).

[175] Experimental evidence for screening effects from surface states in GaAs/AlGaAs based nanostructures, C.T. Liang, C.G. Smith, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 22, 570 (2004).

[176] Fano factor reduction on the 0.7 conductance structure of a ballistic one-dimensional wire, P. Roche, J. Segala, D.C. Glattli, J.T. Nicholls, M. Pepper, A.C. Graham, K.J. Thomas, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 93, 116602 (2004).

[177] Gradual decrease of conductance of an adiabatic ballistic constriction below 2e(2)/h, C.T. Liang, O.A. Tkachenko, V.A. Tkachenko, D.G. Baksheyev, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review B 70, 195324 (2004).

[178] Interactions in high-mobility 2D electron and hole systems, A.K. Savchenko, Y.Y. Proskuryakov, S.S. Safonov, L. Li, M. Pepper, M.Y. Simmons, D.A. Ritchie, E.H. Linfield and Z.D. Kvon, Physica E-low-dimensional Systems & Nanostructures 22, 218 (2004).

[179] Kondo-like behaviour as manifestation of many-body interactions around a quantum antidot, M. Kataoka, C.J.B. Ford, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 558 (2004).

[180] Mobility dependence on carrier density in a dilute GaAs electron gas in an in-plane magnetic field, M.G. Lin, C.P. Huang, C.T. Liang, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 324 (2004).

[181] Selective spin-resolved edge-current injection into a quantum antidot, M. Kataoka, C.J.B. Ford, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 168 (2004).

[182] Self-organised criticality in the quantum Hall effect, K.L. Phillips, M. Elliott, Y. Lu, W.G. Herrenden-Harker, A.J. Matthews, J.D. Gething, A. Usher, M. Henini, D.A. Ritchie and M.Y. Simmons, Physica E-low-dimensional Systems & Nanostructures 22, 210 (2004).

[183] Stability of the bilayer v=1 quantum Hall state under charge imbalance, W.R. Clarke, A.P. Micolich, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 40 (2004).

[184] Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents, A.J. Matthews, K.V. Kavokin, A. Usher, M.E. Portnoi, M. Zhu, J.D. Gething, M. Elliott, W.G. Herrenden-Harker, K. Phillips, D.A. Ritchie, M.Y. Simmons, C.B. Sorensen, O.P. Hansen, O.A. Mironov, M. Myronov, D.R. Leadley and M. Henini, Physical Review B 70, 75317 (2004).

[185] Temperature-dependent high-current breakdown of the quantum Hall effect, A.J. Matthews, K.V. Kavokin, A. Usher, M.E. Portnoi, M. Zhu, J.D. Gething, M. Elliott, W.G. Herrenden-Harker, K. Phillips, D.A. Ritchie, M.Y. Simmons, C.B. Sorensen, O.P. Hansen, O.A. Mironov, M. Myronov, D.R. Leadley and M. Henini, Physica E-low-dimensional Systems & Nanostructures 22, 201 (2004).

[186] Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures, T.M. Chen, C.T. Liang, M.Y. Simmons, G.H. Kim and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 312 (2004).

[187] Unusual conductance collapse in one-dimensional quantum structures, K.J. Thomas, D.L. Sawkey, M. Pepper, W.R. Tribe, I. Farrer, M.Y. Simmons and D.A. Ritchie, Journal Of Physics-condensed Matter 16, L279 (2004).

[188] Upshift of the fractional quantum Hall plateaux: evidence for repulsive scattering for composite fermions, H.S. Wang, Y.H. Chiu, G.H. Kim, C.T. Liang, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 22, 135 (2004).

[189] Weak localization in high-quality two-dimensional systems, S. McPhail, C.E. Yasin, A.R. Hamilton, M.Y. Simmons, E.H. Linfield, M. Pepper and D.A. Ritchie, Physical Review B 70, 245311 (2004).

[190] Scanning tunneling microscopy imaging of charged defects on Si(100)-2x1, G.W. Brown, H. Grube, M.E. Hawley, S.R. Schofield, N.J. Curson, M.Y. Simmons and R.G. Clark, Journal Of Vacuum Science & Technology A 21, 1506 (2003).

[191] Progress in silicon-based quantum computing, R.G. Clark, R. Brenner, T.M. Buehler, V. Chan, N.J. Curson, A.S. Dzurak, E. Gauja, H-S. Goan, A.D. Greentree, T. Hallam, A.R. Hamilton, L.C.L. Hollenberg, D.N. Jamieson, J.C. McCallum, G.J. Milburn, J.L. O'Brien, L. Oberbeck, C.I. Pakes, S. Prawer, D.J. Reilly, F.J. Ruess, S.R. Schofield, M.Y. Simmons, F.E. Stanley, R.P. Starrett, C. Wellard and C. Yang, Philosophical Transactions Of The Royal Society Of London A 361, 1451 (2003).

[192] Critical issues in the formation of atomic arrays of phosphorus in silicon for the fabrication of a solid state quantum computer, N.J. Curson, S.R. Schofield, M.Y. Simmons, L. Oberbeck, R.G. Clark, Surface Science 532, 678 (2003).

[193] Interaction effects at crossings of spin-polarized one-dimensional subbands, A.C Graham, K.J. Thomas, M. Pepper, N.R. Cooper, M.Y. Simmons, D.A Ritchie, Physical Review Letters 91, 136404 (2003).

[194] Ultrafast spin evolution in high-mobility 2DEGs, R.T. Harley, M.A. Brand, A. Malinowski, O.Z. Karimov, P.A. Marsden, A.J. Shields, D. Sanvitto, D.A. Ritchie, M.Y. Simmons, Physica E : Low-dimensional Systems & Nanostructures 17, 324 (2003).

[195] Selective spin-resolved edge-current injection into a quantum antidot, M. Kataoka, C.J.B. Ford, M.Y. Simmons and D.A. Ritchie, Hysical Review B 68, 153305 (2003).

[196] Spin dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field, C.T. Liang, G.C. Smith, M.Y. Simmons, G.H. Kim, D.A. Ritchie, M. Peper, Physica E : Low-dimensional Systems & Nanostructures 18, 141 (2003).

[197] STM investigation of epitaxial Si growth for the fabrication of a Si based quantum computer, L. Oberbeck, T. Hallam, N.J. Curson, M.Y. Simmons, and R.G. Clark, Applied Surface Science 212, 319 (2003).

[198] Challenges in surface science for a P in Si quantum computer - phosphine adsorption / incorporation and epitaxial Si encapsulation, L. Oberbeck, N.J. Curson, S.R. Schofield, T. Hallam, M.Y. Simmons and R.G. Clark, Surface Review And Letters 10, 415 (2003).

[199] Optical imaging of trion diffusion and drift in GaAs quantum wells, F. Pulizzi, D. Sanvitto, P.C.M. Christianen, A.J. Shields, S.N.. Holmes, M.Y. Simmons, D.A Ritchie, M. Pepper and J.C. Maan, Physical Review B 68, 205304 (2003).

[200] Atomically precise placement of single dopants in Si, S.R. Schofield, N.J. Curson, M.Y. Simmons, F.J. Ruess, T. Hallam, L. Oberbeck and R.G. Clark, Physical Review Letters 91, 136104 (2003).

[201] Towards the atomic-scale fabrication of a silicon-based solid state quantum computer, M.Y. Simmons, S.R. Schofield, J.L. O'Brien, N.J. Curson, L. Oberbeck, T. Hallam and R.G. Clark, Surface Science 532, 1209 (2003).

[202] Magnetization measurements of high-mobility two-dimensional electron gases, M. Zhu, A. Usher, A.J. Matthews, A. Potts, M. Elliot, W.G. Herrenden-Harker, D.A. Ritchie and M.Y. Simmons, Physical Review B 67, 155329 (2003).

[203] Atomic-control Placement of Individual P atoms in Si for the Fabrication of a Quantum Computer Qubit Array, S.R. Schofield, N.J. Curson, M.Y. Simmons, T. Hallam, F.J. Ruess, L. Oberbeck and R.G. Clark, Nanotech 2003 2, 68 (2003).

[204] Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer, L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons, K.E.J. Goh, S.R. Schofield, F.J. Ruess and R.G. Clark, 2002 Conference On Optoelectronic And Microelectronic Materials And Devices , 259 (2003).

[205] 'Metallic' behaviour of 2D electron and hole systems near the 'metal'-to-'insulator' transition, L. Li, S.S. Safonov, Y.Y. Proskuryakov, A.K. Savchenko, M. Pepper, M.Y. Simmons, E.H. Linfield and D.A. Ritchie, Journal Of The Physical Society Of Japan 72, 63 (2003).

[206] Deviation from exact conductance quantization in a short clean one-dimensional channel, C.T. Liang, O.A. Tkachenko, V.A. Tkachenko, D.G. Baksheyev, M.Y. Simmons, D.A. Ritchie and M. Pepper, International Journal Of Nanoscience, Vol 2, No 6 2, 551 (2003).

[207] Effects of accidental microconstriction on the quantized conductance in long wires, A.A. Starikov, I.I. Yakimenko, K.F. Berggren, A.C. Graham, K.J. Thomas, M. Pepper and M.Y. Simmons, 10th International Symposium On Nanostructures: Physics And Technology 5023, 267 (2003).

[208] Fabricating a qubit array with a scanning tunneling microscope, M.E. Hawley, G.W. Brown, M.Y. Simmons and R.G. Clark, Los Alamos Science 27, 302 (2002).

[209] Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer, L. Oberbeck, N.J. Curson, M.Y. Simmons, R. Brenner, A.R. Hamilton, S.R. Schofield and R.G. Clark, Applied Physics Letters 81, 3197 (2002).

[210] Scanning tunnelling microscope fabrication of arrays of phosphorus atom qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Smart Materials And Structures 11, 741 (2002).

[211] Dynamic of spin triplet and singlet trions in a GaAs quantum well, D. Sanvitto, D.M. Whittaker, A.J. Shields, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica Status Solidi A-applied Research 190, 809 (2002).

[212] Effect of temperature and magnetic field on the 0.7 structure in a ballistic one-dimensional wire, K.J. Thomas, J.T. Nicholls, M. Pepper, M.Y. Simmons, D.R. Mace and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 12, 708 (2002).

[213] Exchange-driven bilayer-to-monolayer charge transfer in an asymmetric double-quantum-well, A.R. Hamilton, M.Y. Simmons, C.B. Hanna, J.C. Diaz-Velez, M. Pepper and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 12, 304 (2002).

[214] Experimental studies of composite fermion conductivity: dependence on carrier density, Y.M. Cheng, T.Y. Huang, C.T. Liang, M.Y. Simmons, C.F. Huang, C.G. Smith, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 12, 105 (2002).

[215] Fermi-liquid behaviour near the crossover from 'metal' to 'insulator' in 2D systems, A.K. Savchenko, Y.Y. Proskuryakov, S.S. Safonov, S.H. Roshko, M. Pepper, M.Y. Simmons, D.A. Ritchie, A.G. Pogosov and Z.D. Kvon, Physica Status Solidi B-basic Research 230, 89 (2002).

[216] Fermi-liquid behaviour near the crossover from 'metal' to 'insulator' of 2D electron and hole systems, A.K. Savchenko, Y.Y. Proskuryakov, S.S. Safonov, S.H. Roshko, M. Pepper, M.Y. Simmons, D.A. Ritchie, A.G. Pogosov and Z.D. Kvon, Physica E-low-dimensional Systems & Nanostructures 12, 595 (2002).

[217] Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime, Y.Y. Proskuryakov, A.K. Savchenko, S.S. Safonov, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 89, 76406 (2002).

[218] Imaging charged defects on clean Si(100)-(2x1) with scanning tunneling microscopy, G.W. Brown, H. Grube, M.E. Hawley, S.R. Schofield, N.J. Curson, M.Y. Simmons and R.G. Clark, Journal Of Applied Physics 92, 820 (2002).

[219] Imaging electrostatic microconstrictions in long 1D wires, R. Crook, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 12, 695 (2002).

[220] Kondo effect in a quantum antidot, M. Kataoka, C.J.B. Ford, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 89, 226803 (2002).

[221] Localisation in strongly interacting 2D GaAs systems, M.Y. Simmons, A.R. Hamilton, C.E. Yasin, M. Pepper, E.H. Linfield, D.A. Ritchie, K.W. West and L.N. Pfeiffer, Physica Status Solidi B-basic Research 230, 81 (2002).

[222] Origin of the oscillator strength of the triplet state of a trion in a magnetic field, D. Sanvitto, D.M. Whittaker, A.J. Shields, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review Letters 89, 246805 (2002).

[223] Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas, M.A. Brand, A. Malinowski, O.Z. Karimov, P.A. Marsden, R.T. Harley, A.J. Shields, D. Sanvitto, D.A. Ritchie and M.Y. Simmons, Physical Review Letters 89, 236601 (2002).

[224] Quantum-dot electron occupancy controlled by a charged scanning probe, R. Crook, C.G. Smith, W.R. Tribe, S.J. O'Shea, M.Y. Simmons and D.A. Ritchie, Physical Review B 66, 121301 (2002).

[225] Spin-dependent transport in a two-dimensional GaAs electron gas in a parallel magnetic field, Y.M. Cheng, T.Y. Huang, C.H. Pao, C.C. Lee, C.T. Liang, M.Y. Simmons, C.G. Smith, D.A. Ritchie, M. Pepper, G.H. Kim and J.Y. Leem, Physica E-low-dimensional Systems & Nanostructures 12, 412 (2002).

[226] Spin-splitting of Aharonov-Bohm oscillations in an antidot, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 12, 782 (2002).

[227] The fate of quantum Hall extended states as B -> 0 and the possibility of a 2D metal, C.E. Yasin, M.Y. Simmons, A.R. Hamilton, N.E. Lumpkin, R.G. Clark, L.N. Pfeiffer and K.W. West, Physica E-low-dimensional Systems & Nanostructures 12, 646 (2002).

[228] Tuning the electron transport properties of a one-dimensional constriction using hydrostatic pressure, R. Wirtz, R. Newbury, J.T. Nicholls, W.R. Tribe, M.Y. Simmons and M. Pepper, Physical Review B 65, 233316 (2002).

[229] Tunneling gap collapse and v=2 quantum Hall state in a bilayer electron system, S.J. Geer, A.G. Davies, C.H.W. Barnes, K.R. Zolleis, M.Y. Simmons and D.A. Ritchie, Physical Review B 66, 45318 (2002).

[230] Construction of a silicon-based solid state quantum computer, A.S. Dzurak, M.Y. Simmons, A.R. Hamilton, R.G. Clark, R. Brenner, T.M. Buehler, N.J. Curson, E. Gauja, R.P. McKinnon, L.D. Macks, M. Mitic, J.L. O'Brien, L. Oberbeck, D.J. Reilly, S.R.Schofield, F.E. Stanley, D.N. Jamieson, S. Prawer, C. Yang and G.J. Milburn, Quantum Information And Computation 1, 82 (2001).

[231] Towards the fabrication of phosphorus qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Physical Review B: Rapid Communications 64, 1614 (2001).

[232] Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Biomems And Smart Nanostructures 4590, 299 (2001).

[233] Coulomb charging effect in an open quantum dot device, O.A. Tkachenko, V.A. Tkachenko, D.G. Baksheyev, C.T. Liang, M.Y. Simmons, C.G. Smith, D.A. Ritchie, G.H. Kim and M. Pepper, Journal Of Physics-condensed Matter 13, 9515 (2001).

[234] Coulomb charging effects in an open quantum dot device at zero magnetic field, C.T. Liang, M.Y. Simmons, C.G. Smith, G.H. Kim, D.A. Ritchie and M. Pepper, Japanese Journal Of Applied Physics Part 1-regular Papers Short Notes & Review Papers 40, 1936 (2001).

[235] Effective potential calculation in a two-dimensional electron gas containing quasi one-dimensional AlAs submonolayer, G.H. Kim, H.S. Sim, M.Y. Simmons, C.T. Liang and D.A. Ritchie, Journal Of The Korean Physical Society 39, S11 (2001).

[236] Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s), Y.Y. Proskuryakov, A.K. Savchenko, S.S. Safonov, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 86, 4895 (2001).

[237] Formation and recombination dynamics of charged excitons in a GaAs quantum well, D. Sanvitto, R.A. Hogg, A.J. Shields, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica Status Solidi B-basic Research 227, 297 (2001).

[238] Imaging random telegraph signal sites near a quasi 1D electron system, R. Crook, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Journal Of Physics-condensed Matter 13, L249 (2001).

[239] Localisation and the metal-insulator transition in two dimensions, A.R. Hamilton, M.Y. Simmons, M. Pepper, E.H. Linfield and D.A. Ritchie, Physica B 296, 21 (2001).

[240] Metallic behavior in dilute two-dimensional hole systems, A.R. Hamilton, M.Y. Simmons, M. Pepper, E.H. Linfield and D.A. Ritchie, Physical Review Letters 87, 126802 (2001).

[241] Metallic behaviour and localisation in 2D GaAs hole systems, M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose and D.A. Ritchie, Physica E 11, 161 (2001).

[242] Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces, G.H. Kim, M.Y. Simmons, C.T. Liang, D.A. Ritchie, A.C. Churchill, H.S. Sim, K.J. Chang, G. Ihm and N. Kim, Physical Review B 64, 165313 (2001).

[243] Observation of charge transport by negatively charged excitons, D. Sanvitto, F. Pulizzi, A.J. Shields, P.C.M. Christianen, S.N. Holmes, M.Y. Simmons, D.A. Ritchie, J.C. Maan and M. Pepper, Science 294, 837 (2001).

[244] Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases, C.T. Liang, Y.M. Cheng, T.Y. Huang, C.F. Huang, M.Y. Simmons, D.A. Ritchie, G.H. Kim, J.Y. Leem, Y.H. Chang and Y.F. Chen, Journal Of Physics And Chemistry Of Solids 62, 1789 (2001).

[245] Scanning noninvasive voltage probe operating at 4.2 K, A.T. Sellwood, C.G. Smith, E.H. Linfield, M.Y. Simmons and D.A. Ritchie, Review Of Scientific Instruments 72, 2100 (2001).

[246] Spin-dependent transport in a dilute two-dimensional GaAs electron gas in a parallel magnetic field, C.T. Liang, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Physical Review B 64, 233319 (2001).

[247] Towards the fabrication of phosphorus qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Physical Review B 64, 161401 (2001).

[248] Transport in a modulated one-dimensional ballistic channel, C.T. Liang, M. Pepper, M.Y. Simmons, C.G. Smith, G.H. Kim and D.A. Ritchie, Chinese Journal Of Physics 39, 533 (2001).

[249] A method of determining potential barrier heights at semiconductor heterointerfaces, G.H. Kim, H.S. Sim, M.Y. Simmons, D.A. Ritchie, C.T. Liang, A.C. Churchill and W.S. Han, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 753 (2001).

[250] Double-frequency Aharonov-Bohm effect in an antidot, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons and D.A. Ritchie, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 941 (2001).

[251] Excess carrier effects upon the excitonic absorption thresholds of remotely doped GaAs/AlGaAs quantum wells., R. Kaur, A.J. Shields, R.A. Hogg, J.L. Osborne, M.Y. Simmons, D.A. Ritchie and M. Pepper, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 505 (2001).

[252] Is there a true metallic state in two dimensions?, M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose and D.A. Ritchie, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 735 (2001).

[253] Rapid recombination process of free trions, D. Sanvitto, R.A. Hogg, A.J. Shields, D.M. Whittaker, M.Y. Simmons, D.A. Ritchie and M. Pepper, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 497 (2001).

[254] Spin-dependent transport in a quasiballistic wire, C.T. Liang, M. Pepper, M.Y. Simmons, C.G. Smith, G.H. Kim and D.A. Ritchie, Proceedings Of The 25th International Conference On The Physics Of Semiconductors, Pts I And Ii 87, 1041 (2001).

[255] Bonding and antibonding states in strongly coupled ballistic one-dimensional wires, K.J. Thomas, J.T. Nicholls, W.R. Tribe, M.Y. Simmons, A.G. Davies, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 6, 581 (2000).

[256] Coulomb blockade of tunneling through compressible rings formed around an antidot: An explanation for h/2e Aharonov-Bohm oscillations, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons and D.A. Ritchie, Physical Review B 62, R4817 (2000).

[257] Crystallographic orientation dependence of bulk optical rectification, A. Corchia, C.M. Ciesla, D.D. Arnone, E.H. Linfield, M.Y. Simmons and M. Pepper, Journal Of Modern Optics 47, 1837 (2000).

[258] Current breakdown of the integer and fractional quantum Hall effects detected by torque magnetometry, A.J. Matthews, J.P. Watts, M. Zhu, A. Usher, M. Elliott, W.G. Herrenden-Harker, P.R. Morris, M.Y. Simmons and D.A. Ritchie, Physica E 6, 140 (2000).

[259] Detection of Coulomb charging around an antidot, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons, D.R. Mace, C.T. Liang and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 6, 495 (2000).

[260] Direction-resolved transport and possible many-body effects in one-dimensional thermopower, N.J. Appleyard, J.T. Nicholls, M. Pepper, W.R. Tribe, M.Y. Simmons and D.A. Ritchie, Physical Review B 62, R16275 (2000).

[261] Electron correlations in an electron bilayer at finite temperature: Landau damping of the acoustic plasmon, D.S. Kainth, D. Richards, H.P. Hughes, M.Y. Simmons and D.A. Ritchie, Journal Of Physics-condensed Matter 12, 439 (2000).

[262] Electron density dependence of the excitonic absorption thresholds of GaAs quantum wells, R. Kaur, A.J. Shields, J.L. Osborne, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica Status Solidi A-applied Research 178, 465 (2000).

[263] Evidence for charging effects in an open dot at zero magnetic field, C.T. Liang, M.Y. Simmons, C.G. Smith, G.H. Kim, D.A. Ritchie and M. Pepper, Physica E 6, 418 (2000).

[264] Imaging cyclotron orbits and scattering sites in a high-mobility two-dimensional electron gas, R. Crook, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Physical Review B 62, 5174 (2000).

[265] Imaging diffraction-limited electronic collimation from a non-equilibrium one-dimensional ballistic constriction, R. Crook, C.G. Smith, C.H.W. Barnes, M.Y. Simmons and D.A. Ritchie, Journal Of Physics-condensed Matter 12, L167 (2000).

[266] Imaging electron and conduction-band-hole trajectories through one and two series constrictions, R. Crook, C.G. Smith, C.H.W. Barnes, M.Y. Simmons and D.A. Ritchie, Physica E 6, 234 (2000).

[267] Independent contacts to a double-electron gas using mesoscopic surface gates, S.A. Nield, J.T. Nicholls, W.R. Tribe, M.Y. Simmons and D.A. Ritchie, Journal Of Applied Physics 87, 4036 (2000).

[268] Influence of inversion symmetry on the metallic behaviour in a dilute two-dimensional hole system, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Australian Journal Of Physics 53, 523 (2000).

[269] Is there a metallic state in two dimensions?, M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose and D.A. Ritchie, Australian Journal Of Physics 53, 513 (2000).

[270] Multilayered gated lateral quantum dot devices, C.T. Liang, M.Y. Simmons, C.G. Smith, G.H. Kim, D.A. Ritchie and M. Pepper, Applied Physics Letters 76, 1134 (2000).

[271] One-dimensional probability density observed using scanned gate microscopy, R. Crook, C.G. Smith, M.Y. Simmons and D.A. Ritchie, Journal Of Physics-condensed Matter 12, L735 (2000).

[272] Rapid radiative decay of charged excitons, D. Sanvitto, R.A. Hogg, A.J. Shields, D.M. Whittaker, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review B 62, R13294 (2000).

[273] Spin properties of low-density one-dimensional wires, K.J. Thomas, J.T. Nicholls, M. Pepper, W.R. Tribe, M.Y. Simmons and D.A. Ritchie, Physical Review B 61, 13365 (2000).

[274] Spin relaxation in GaAs/AlxGa1-xAs quantum wells, A. Malinowski, R.S. Britton, T. Grevatt, R.T. Harley, D.A. Ritchie and M.Y. Simmons, Physical Review B 62, 13034 (2000).

[275] Spin-dependent transport in a quasiballistic quantum wire, C.T. Liang, M. Pepper, M.Y. Simmons, C.G. Smith and D.A. Ritchie, Physical Review B 61, 9952 (2000).

[276] Thermopower of one-dimensional devices - measurement and applications, N.J. Appleyard, J.T. Nicholls, W.R. Tribe, M.Y. Simmons and M. Pepper, Physica E 6, 534 (2000).

[277] Weak localization, hole-hole interactions, and the "metal"-insulator transition in two dimensions, M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose and D.A. Ritchie, Physical Review Letters 84, 2489 (2000).

[278] Angle-resolved Raman spectroscopy of the collective modes in an electron bilayer, D.S. Kainth, D. Richards, A.S. Bhatti, H.P. Hughes, M.Y. Simmons, E.H. Linfield and D.A. Ritchie, Physical Review B 59, 2095 (1999).

[279] Anomalous integer quantum Hall states in coupled double quantum wells and the effect of Landau level broadening, I.S. Millard, N.K. Patel, C.L. Foden, A.R. Hamilton, M.Y. Simmons, D.A. Ritchie, G.A.C. Jones and M. Pepper, Journal Of Physics-condensed Matter 11, 3711 (1999).

[280] Carrier dynamics and recombination processes of charged excitons in a GaAs/AlGaAs quantum well, R.A. Hogg, D. Sanvitto, A.J. Shields, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica B 272, 412 (1999).

[281] Condensed-matter physics - Real metals, 2D or not 2D, M.Y. Simmons and A.R. Hamilton, Nature 400, 715 (1999).

[282] Controlled wave-function mixing in strongly coupled one-dimensional wires, K.J. Thomas, J.T. Nicholls, M.Y. Simmons, W.R. Tribe, A.G. Davies and M. Pepper, Physical Review B 59, 12252 (1999).

[283] Detection of Coulomb charging around an antidot in the quantum Hall regime, M. Kataoka, C.J.B. Ford, G. Faini, D. Mailly, M.Y. Simmons, D.R. Mace, C.T. Liang and D.A. Ritchie, Physical Review Letters 83, 160 (1999).

[284] Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AlGaAs heterostructures, C.T. Liang, M.Y. Simmons, C.G. Smith, D.A. Ritchie and M. Pepper, Applied Physics Letters 75, 2975 (1999).

[285] Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures, R.H. Harrell, K.S. Pyshkin, M.Y. Simmons, D.A. Ritchie, C.J.B. Ford, G.A.C. Jones and M. Pepper, Applied Physics Letters 74, 2328 (1999).

[286] Intrinsic coupling mechanisms between two-dimensional electron systems in double quantum well structures, C.H.W. Barnes, A.G. Davies, K.R. Zolleis, M.Y. Simmons and D.A. Ritchie, Physical Review B 59, 7669 (1999).

[287] Reentrant insulator-metal-insulator transition at B=0 in a two-dimensional hole gas, A.R. Hamilton, M.Y. Simmons, M. Pepper, E.H. Linfield, P.D. Rose and D.A. Ritchie, Physical Review Letters 82, 1542 (1999).

[288] Single-electron acoustic charge transport by two counterpropagating surface acoustic wave beams, J. Cunningham, V.I. Talyanskii, J.M. Shilton, M. Pepper, M.Y. Simmons and D.A. Ritchie, Physical Review B 60, 4850 (1999).

[289] Spin-dependent transport in a clean one-dimensional channel, C.T. Liang, M.Y. Simmons, C.G. Smith, G.H. Kim, D.A. Ritchie and M. Pepper, Physical Review B 60, 10687 (1999).

[290] Very high quality 2DEGS formed without dopant in GaAs AlGaAs heterostructures, R.H. Harrell, J.H. Thompson, D.A. Ritchie, M.Y. Simmons, G.A.C. Jones and M. Pepper, Journal Of Crystal Growth 201, 159 (1999).

[291] A study of the relative strengths of spin-pseudospin phases in a strongly coupled double quantum well system, C.H.W. Barnes, A.G. Davies, K.R. Zolleis, M.Y. Simmons and D.A. Ritchie, Physica B-condensed Matter 256, 130 (1998).

[292] Charged excitons under applied electric and magnetic fields, A.J. Shields, J.L. Osborne, D.M. Whittaker, M.Y. Simmons, F.M. Bolton, D.A. Ritchie and M. Pepper, Physica B 251, 584 (1998).

[293] Closely separated one-dimensional wires: coupled ballistic conduction, wave function hybridization and compressibility investigations, I.M. Castleton, A.G. Davies, A.R. Hamilton, J.E.F. Frost, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica B 251, 157 (1998).

[294] Current breakdown of the fractional quantum Hall effect through contactless detection of induced currents, J.P. Watts, A. Usher, A.J. Matthews, M. Zhu, M. Elliott, W.G. Herrenden-Harker, P.R. Morris, M.Y. Simmons and D.A. Ritchie, Physical Review Letters 81, 4220 (1998).

[295] Electron coupling effects on negatively charged excitons in GaAs double quantum wells, A.J. Shields, J.L. Osborne, D.M. Whittaker, M.Y. Simmons, D.A. Ritchie and M. Pepper, Solid-state Electronics 42, 1569 (1998).

[296] Electron reflection and interference in the GaAs/AlAs-Al Schottky collector resonant-tunneling diode, A.J. North, E.H. Linfield, M.Y. Simmons, D.A. Ritchie, M.L. Leadbeater, J.H. Burroughes, C.L. Foden and M. Pepper, Physical Review B 57, 1847 (1998).

[297] Excitonic recombination processes in spin-polarized two-dimensional electron gases, J.L. Osborne, A.J. Shields, M.Y. Simmons, N.R. Cooper, D.A. Ritchie and M. Pepper, Physical Review B 58, R4227 (1998).

[298] Excitons, spin-waves and Skyrmions in the optical spectra of a two dimensional electron gas, J.L. Osborne, A.J. Shields, M.Y. Simmons, N.R. Cooper, D.A. Ritchie and M. Pepper, Solid-state Electronics 42, 1169 (1998).

[299] Experimental evidence for a metal-insulator transition and geometric effect in a half-filled Landau level, C.T. Liang, J.E.F. Frost, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica E 2, 78 (1998).

[300] Experimental evidence for Coulomb charging effects in an open quantum dot at zero magnetic field, C.T. Liang, M.Y. Simmons, C.G. Smith, G.H. Kim, D.A. Ritchie and M. Pepper, Physical Review Letters 81, 3507 (1998).

[301] Interaction effects in a one-dimensional constriction, K.J. Thomas, J.T. Nicholls, N.J. Appleyard, M.Y. Simmons, M. Pepper, D.R. Mace, W.R. Tribe and D.A. Ritchie, Physical Review B 58, 4846 (1998).

[302] Magnetization and incompressibility of a high mobility 2D electron gas in the IQHE, S.A.J. Wiegers, M. Specht, L.P. Levy, M.Y. Simmons, D.A. Ritchie, A. Cavanna, B. Etienne, G. Martinez and P. Wyder, Physica B 251, 115 (1998).

[303] Magnetization of an incompressible two-dimensional electron gas, S.A.J. Wiegers, M. Specht, E.D. Bibow, L.P. Levy, S. Melinte, E. Grivei, V. Bayot, M.Y. Simmons, D.A. Ritchie, M. Shayegan, A. Cavanna, B. Etienne, G. Martinez and P. Wyder, Physica B-condensed Matter 256, 16 (1998).

[304] Magneto-optical study of excitonic states in 2DEGs near filling factor v=1, J.L. Osborne, A.J. Shields, M.Y. Simmons, N.R. Cooper, D.A. Ritchie and M. Pepper, Physica B-condensed Matter 251, 538 (1998).

[305] Many-body interactions, the quantum Hall effect, and insulating phases in bilayer two-dimensional hole-gas systems, A.R. Hamilton, M.Y. Simmons, T.G. Griffiths, A.K. Savchenko, M. Pepper and D.A. Ritchie, Physica B-condensed Matter 251, 819 (1998).

[306] Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas, M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose, D.A. Ritchie, A.K. Savchenko and T.G. Griffiths, Physical Review Letters 80, 1292 (1998).

[307] Metal-insulator transition at B=0 in an ultra-low density two-dimensional hole gas, M.Y. Simmons, A.R. Hamilton, T.G. Griffiths, A.K. Savchenko, M. Pepper and D.A. Ritchie, Physica B-condensed Matter 251, 705 (1998).

[308] Multiple subband crossing in a one-dimensional hole gas with enhanced g-factors, A.J. Daneshvar, C.J.B. Ford, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physica B-condensed Matter 251, 166 (1998).

[309] Non-equilibrium transport along an edge of variable slope in the fractional quantum Hall regime, J.D.F. Franklin, C.J.B. Ford, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica B 251, 405 (1998).

[310] Nonlinear transport in a single-mode one-dimensional electron gas, K.J. Thomas, J.T. Nicholls, M.Y. Simmons, M. Pepper, D.R. Mace and D.A. Ritchie, Philosophical Magazine B-physics Of Condensed Matter Statistical Mechanics Electronic Optical And Magnetic Properties 77, 1213 (1998).

[311] Onset of subband locking in double-quantum-well structures as the signature of wave function delocalization, K.R. Zolleis, C.H.W. Barnes, A.G. Davies, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physica B 251, 850 (1998).

[312] Probing the transition from insulating to metallic behaviour using bi-layer electron systems, A.G. Davies, C.H.W. Barnes, K.R. Zolleis, M.Y. Simmons and D.A. Ritchie, Physica B-condensed Matter 256, 417 (1998).

[313] Raman scattering study of the plasmon modes in bilayer systems, D.S. Kainth, D. Richards, H.P. Hughes, M.Y. Simmons and D.A. Ritchie, Physica E-low-dimensional Systems & Nanostructures 2, 834 (1998).

[314] Skyrmion-hole excitations at v=1 studied by photoluminescence spectroscopy, H.D.M. Davies, J.C. Harris, R.L. Brockbank, J.F. Ryan, A.J. Turberfield, M.Y. Simmons and D.A. Ritchie, Physica B 251, 544 (1998).

[315] Stark effect of negatively and positively charged excitons in semiconductor quantum wells, A.J. Shields, J.L. Osborne, M.Y. Simmons, D.M. Whittaker, F.M. Bolton, D.A. Ritchie and M. Pepper, Physica E-low-dimensional Systems & Nanostructures 2, 87 (1998).

[316] Temperature-dependent Landau damping of the acoustic plasmon in a bilayer system, D.S. Kainth, D. Richards, H.P. Hughes, M.Y. Simmons and D.A. Ritchie, Physical Review B 57, R2065 (1998).

[317] Erratum: Temperature-dependent Landau damping of the acoustic plasmon in a bilayer system [Phys. Rev. B 57, 2065 (1998)], D.S. Kainth, D. Richards, H.P. Hughes, M.Y. Simmons and D.A. Ritchie, Physical Review B 57, 14999 (1998).

[318] Thermometer for the 2D electron gas using 1D thermopower, N.J. Appleyard, J.T. Nicholls, M.Y. Simmons, W.R. Tribe and M. Pepper, Physical Review Letters 81, 3491 (1998).

[319] Compressibility studies of two-dimensional electron gases, N.K. Patel, I.S. Millard, C. Foden, E.H. Linfield, M.Y. Simmons, D.A. Ritchie and M. Pepper, Superlattices And Microstructures 21, 125 (1997).

[320] Effect of finite quantum-well width on the compressibility of a two-dimensional electron gas, I.S. Millard, N.K. Patel, C.L. Foden, E.H. Linfield, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review B 55, 6715 (1997).

[321] Electric-field-induced ionization of negatively charged excitons in quantum wells, A.J. Shields, F.M. Bolton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physical Review B 55, R1970 (1997).

[322] Enhanced g factors of a one-dimensional hole gas with quantized conductance, A.J. Daneshvar, C.J.B. Ford, A.R. Hamilton, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physical Review B 55, 13409 (1997).

[323] Experimental evidence of a metal-insulator transition in a half-filled Landau level, C.T. Liang, J.E.F. Frost, M.Y. Simmons, D.A. Ritchie and M. Pepper, Solid State Communications 102, 327 (1997).

[324] Fabrication of high mobility in situ back-gated (311)A hole gas heterojunctions, M.Y. Simmons, A.R. Hamilton, S.J. Stevens, D.A. Ritchie, M. Pepper and A. Kurobe, Applied Physics Letters 70, 2750 (1997).

[325] Magnetization and energy gaps of a high-mobility 2D electron gas in the quantum limit, S.A.J. Wiegers, M. Specht, L.P. Levy, M.Y. Simmons, D.A. Ritchie, A. Cavanna, B. Etienne, G. Martinez and P. Wyder, Physical Review Letters 79, 3238 (1997).

[326] Magnetization instability in a two-dimensional system, A.J. Daneshvar, C.J.B. Ford, M.Y. Simmons, A.V. Khaetskii, A.R. Hamilton, M. Pepper and D.A. Ritchie, Physical Review Letters 79, 4449 (1997).

[327] Negatively charged excitons in coupled double quantum wells, A.J. Shields, J.L. Osborne, D.M. Whittaker, M.Y. Simmons, M. Pepper and D.A. Ritchie, Physical Review B 55, 1318 (1997).

[328] Observation of magnetic breakdown in coupled double quantum wells, I.S. Millard, N.K. Patel, C.L. Foden, M.Y. Simmons, D.A. Ritchie, G.A.C. Jones and M. Pepper, Physical Review B 55, 13401 (1997).

[329] Resonant Rayleigh scattering by confined two-dimensional excitonic states, N. Garro, R.T. Phillips, A. Cantarero, M.Y. Simmons and D.A. Ritchie, Physica Status Solidi B-basic Research 204, 45 (1997).

[330] Resonant Rayleigh scattering by excitonic states laterally confined in the interface roughness of GaAs/AlxGa1-xAs single quantum wells, N. Garro, L. Pugh, R.T. Phillips, V. Drouot, M.Y. Simmons, B. Kardynal and D.A. Ritchie, Physical Review B 55, 13752 (1997).

[331] The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions, M.Y. Simmons, A.R. Hamilton, A. Kurobe, S.J. Stevens, D.A. Ritchie and M. Pepper, Microelectronics Journal 28, 795 (1997).

[332] X- singlet and triplet states at high magnetic fields, D.M. Whittaker, A.J. Shields, M.Y. Simmons and D.A. Ritchie, Physica Status Solidi A-applied Research 164, 339 (1997).

[333] Ballistic composite fermions in semiconductor nanostructures, J.E.F. Frost, C.T. Liang, D.R. Mace, M.Y. Simmons, D.A. Ritchie and M. Pepper, Physical Review B 53, 9602 (1996).

[334] Comparison of optical and transport measurements of electron densities in GaAs/AlxGa1-xAs quantum wells, A.J. Shields, J.L. Osborne, M.Y. Simmons, D.A. Ritchie and M. Pepper, Semiconductor Science And Technology 11, 890 (1996).

[335] Compressibility studies of double electron and double hole gas systems, I.S. Millard, N.K. Patel, M.Y. Simmons, E.H. Linfield, D.A. Ritchie, G.A.C. Jones and M. Pepper, Applied Physics Letters 68, 3323 (1996).

[336] Detection of the oscillation of the Fermi energy of a 2DEG, C.H.W. Barnes, D.R. Mace, G. Faini, D. Mailly, M.Y. Simmons, C.J.B. Ford and M. Pepper, Surface Science 362, 608 (1996).

[337] Evolution of GaAs quantum well excitons with excess electron density and magnetic field, A.J. Shields, M. Pepper, M.Y. Simmons and D.A. Ritchie, Solid-state Electronics 40, 275 (1996).

[338] Excitonic trions in undoped GaAs quantum wells, R.T. Phillips, G.C. Nixon, T. Fujita, M.Y. Simmons and D.A. Ritchie, Solid State Communications 98, 287 (1996).

[339] Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems, A.R. Hamilton, M.Y. Simmons, F.M. Bolton, N.K. Patel, I.S. Millard, J.T. Nicholls, D.A. Ritchie and M. Pepper, Physical Review B 54, R5259 (1996).

[340] Hybridization of single- and double-layer behavior in a double-quantum-well structure, A.G. Davies, C.H.W. Barnes, K.R. Zolleis, J.T. Nicholls, M.Y. Simmons and D.A. Ritchie, Physical Review B 54, 17331 (1996).

[341] Integer quantum Hall states in coupled double electron gas systems at mismatched carrier densities, I.S. Millard, N.K. Patel, M.Y. Simmons, A.R. Hamilton, D.A. Ritchie and M. Pepper, Journal Of Physics-condensed Matter 8, L311 (1996).

[342] Magneto-optical spectroscopy of neutral and negatively charged excitons in GaAs quantum wells, A.J. Shields, M. Pepper, M.Y. Simmons and D.A. Ritchie, Surface Science 362, 451 (1996).

[343] Measurements of a composite fermion split-gate, C.T. Liang, C.G. Smith, D.R. Mace, J.T. Nicholls, J.E.F. Frost, M.Y. Simmons, A.R. Hamilton, D.A. Ritchie and M. Pepper, Surface Science 362, 71 (1996).

[344] Measurements of a composite fermion split-gate device, C.T. Liang, C.G. Smith, D.R. Mace, J.T. Nicholls, J.E.F. Frost, M.Y. Simmons, A.R. Hamilton, D.A. Ritchie and M. Pepper, Physical Review B 53, R7596 (1996).

[345] Negative transconductance in parallel conducting systems controlled by device geometry and magnetic field, I.S. Millard, N.K. Patel, E.H. Linfield, P.D. Rose, M.Y. Simmons, D.A. Ritchie, G.A.C. Jones and M. Pepper, Semiconductor Science And Technology 11, 483 (1996).

[346] On the acoustoelectric current in a one-dimensional channel, J.M. Shilton, D.R. Mace, V.I. Talyanskii, Y. Galperin, M.Y. Simmons, M. Pepper and D.A. Ritchie, Journal Of Physics-condensed Matter 8, L337 (1996).

[347] Possible spin polarization in a one-dimensional electron gas, K.J. Thomas, J.T. Nicholls, M.Y. Simmons, M. Pepper, D.R. Mace and D.A. Ritchie, Physical Review Letters 77, 135 (1996).

[348] Probing the band structure of a two-dimensional hole gas using a one-dimensional superlattice, B. Brosh, M.Y. Simmons, S.N. Holmes, A.R. Hamilton, D.A. Ritchie and M. Pepper, Physical Review B 54, 14273 (1996).

[349] Raman scattering lineshapes in GaAs and InP, E.T.M. Kernohan, R.T. Phillips, B.H. Bairamov, D.A. Ritchie and M.Y. Simmons, Solid State Communications 100, 263 (1996).

[350] The Aharonov-Bohm effect in the fractional quantum Hall regime, J.D.F. Franklin, I. Zailer, C.J.B. Ford, P.J. Simpson, J.E.F. Frost, D.A. Ritchie, M.Y. Simmons and M. Pepper, Surface Science 362, 17 (1996).

[351] Transport through an array of small ohmic contacts alloyed to the two-dimensional electron gas of a GaAs/AlGaAs heterostructure, V. ChabasseurMolyneux, J.E.F. Frost, M.Y. Simmons, D.A. Ritchie and M. Pepper, Applied Physics Letters 68, 3434 (1996).

[352] Ballistic transport in one_dimensional constrictions formed in deep two_dimensional electron gases, K.J. THOMAS, M.Y. SIMMONS, J.T. NICHOLLS, D.R. MACE, M. PEPPER and D.A. RITCHIE, Applied Physics Letters 67, 109 (1995).

[353] Effect of spatial dispersion on acoustoelectric current in a high-mobility two-dimensional electron gas, J.M. SHILTON, D.R. MACE, V.I. TALYANSKII, M. PEPPER, M.Y. SIMMONS, A.C. CHURCHILL and D.A. RITCHIE, Physical Review B 51, 14770 (1995).

[354] Experimental study of the acoustoelectric effects in GaAs-AlGaAs heterostructures, J.M. SHILTON, D.R. MACE, V.I. TALYANSKII, M.Y. SIMMONS, M. PEPPER, A.C. CHURCHILL and D.A. RITCHIE, Journal Of Physics-condensed Matter 7, 7675 (1995).

[355] General picture of quantum Hall transitions in quantum antidots, D.R. MACE, C.H.W. BARNES, G. FAINI, D. MAILLY, M.Y. SIMMONS, C.J.B. FORD and M. PEPPER, Physical Review B 52, R8672 (1995).

[356] Influence of excess electrons and magnetic fields on Mott-Wannier excitons in GaAs quantum wells, A.J. Shields, M. Pepper, D.A. Ritchie and M.Y. Simmons, Advances In Physics 44, 47 (1995).

[357] Magneto-optical probe of the two-dimensional hole-system low-temperature ground states, A.G. DAVIES, E.E. MITCHELL, R.G. CLARK, P.E. SIMMONDS, D.A. RITCHIE, M.Y. SIMMONS, M. PEPPER and G.A.C. JONES, Physical Review B 51, 7357 (1995).

[358] Magneto-optical spectroscopy of positively charged excitons in GaAs quantum wells, A.J. SHIELDS, J.L. OSBORNE, M.Y. SIMMONS, M. PEPPER and D.A. RITCHIE, Physical Review B 52, R5523 (1995).

[359] Magnetothermopower oscillations in a lateral superlattice, R. TABORYSKI, B. BROSH, M.Y. SIMMONS, D.A. RITCHIE, C.J.B. FORD and M. PEPPER, Physical Review B 51, 17243 (1995).

[360] Quenching of excitonic optical transitions by excess electrons in GaAs quantum wells, A.J. SHIELDS, M. PEPPER, D.A. RITCHIE, M.Y. SIMMONS and G.A.C. JONES, Physical Review B 51, 18049 (1995).

[361] Reflection of edge states in the fractional quantum Hall regime, J.E.F. FROST, C.T. LIANG, D.R. MACE, M.Y. SIMMONS, M. PEPPER and D.A. RITCHIE, Solid State Communications 96, 327 (1995).

[362] Spin-triplet negatively charged excitons in GaAs quantum wells, A.J. SHIELDS, M. PEPPER, M.Y. SIMMONS and D.A. RITCHIE, Physical Review B 52, 7841 (1995).

[363] The growth of high mobility heterostructures on (311)B GaAs, M.Y. Simmons, A.C. Churchill, G.H. Kim, A.R. Hamilton, A. Kurobe, D.R. Mace, D.A. Ritchie and M. Pepper, Microelectronics Journal 26, 897 (1995).

[364] The propagation of low-frequency edge excitations in a two-dimensional electron gas in the IQHE regime, V.I. TALYANSKII, D.R. MACE, M.Y. SIMMONS, M. PEPPER, A.C. CHURCHILL, J.E.F. FROST, D.A. RITCHIE and G.A.C. JONES, Journal Of Physics-condensed Matter 7, L435 (1995).

[365] Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substrates, A.C. CHURCHILL, G.H. KIM, A. KUROBE, M.Y. SIMMONS, D.A. RITCHIE, M. PEPPER and G.A.C. JONES, Journal Of Physics-condensed Matter 6, 6131 (1994).

[366] Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates, A.C. CHURCHILL, G.H. KIM, M.Y. SIMMONS, D.A. RITCHIE and G.A.C. JONES, Physical Review B 50, 17636 (1994).

[367] Experimental investigation of the damping of low-frequency edge magnetoplasmons in GaAs-AlxGa1-xAs heterostructures, V.I. TALYANSKII, M.Y. SIMMONS, J.E.F. FROST, M. PEPPER, D.A. RITCHIE, A.C. CHURCHILL and G.A.C. JONES, Physical Review B 50, 1582 (1994).

[368] Optimization of high mobility two_dimensional hole gases, M.Y. SIMMONS, D.A. RITCHIE, I. ZAILER, A.C. CHURCHILL and G.A.C. JONES, Journal Of Vacuum Science & Technology B 12, 1296 (1994).

[369] Phase coherence, interference, and conductance quantization in a confined two-dimensional hole gas, I. ZAILER, J.E.F. FROST, C.J.B. FORD, M. PEPPER, M.Y. SIMMONS, D.A. RITCHIE, J.T. NICHOLLS and G.A.C. JONES, Physical Review B 49, 5101 (1994).

[370] Temperature limits for ballistic quantization in a GaAs/AlGaAs one-dimensional constriction, J.E.F. FROST, M.Y. SIMMONS, M. PEPPER, A.C. CHURCHILL, D.A. RITCHIE and G.A.C. JONES, Journal Of Physics-condensed Matter 5, L559 (1993).

[371] Electrical and optical characterisation of epitaxial ZnTe/CdTe/CdS and ZnTe/CdTe/GaAs p-i-n solar cell structures grown by metalorginic vapour phase epitaxy, M.Y. SIMMONS, H.M. ALALLAK, A.W. BRINKMAN and K. DUROSE, Journal Of Crystal Growth 117, 959 (1992).

[372] Microstructural and electrical properties of epitaxial ZnTe/CdTe/CdS p-i-n solar cells and related materials, K. DUROSE, P.D. BROWN, M.Y. SIMMONS, H.M. ALALLAK and A.W. BRINKMAN, Institute Of Physics Conference Series , 533 (1991).

[373] MOVPE growth and characterisation of CdTe on CdS single crystal substrates, M.Y. SIMMONS, P.D. BROWN and K. DUROSE, Journal Of Crystal Growth 107, 664 (1991).

[374] MICROSTRUCTURAL AND ELECTRICAL-PROPERTIES OF SINGLE-CRYSTAL ZNTE/CDTE/CDS P-I-N SOLAR-CELLS AND RELATED MATERIALS, K. DUROSE, P.D. BROWN, M.Y. SIMMONS, H.M. ALALLAK and A.W. BRINKMAN, Microscopy Of Semiconducting Materials 1991 117, 533 (1991).

[375] TEM STUDIES OF CD-ZN-TE-BASED II-VI SUPERLATTICES AND EPITAXIAL LAYERS, P.D. BROWN, H. KELLY, P.A. CLIFTON, J.T. MULLINS, M.Y. SIMMONS, K. DUROSE, A.W. BRINKMAN, T.D. GOLDING and J. DINAN, Long-wavelength Semiconductor Devices, Materials, And Processes 216, 427 (1991).

Book Citations


[1] Atomically Precise Silicon Device Fabrication in 2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3,
M.Y. Simmons, F.J. Ruess, W. Pok, D.L. Thompson, M. Fuchsle, G. Scappucci, T.C.G. Reusch, K.E.J. Goh, S.R. Schofield, B. Weber, L. Oberbeck, A.R. Hamilton and F. Ratto,
(2007).

[2] Atomic-control placement of individual P atoms in Si for the fabrication of a quantum computer qubit array in NANOTECH 2003, VOL 2,
S.R. Schofield, N.J. Curson, M.Y. Simmons, T. Hallam, F.J. Ruess, L. Oberbeck and R.G. Clark,
(2003).

[3] Nanotechnology: Basic Science and energy technologies,
M. Wilson, K. Kannargara, G. Smith, M.Y. Simmons and B. Raguese,
UNSW Press (2002).

[4] Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer in COMMAD 2002 PROCEEDINGS,
L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons, K.E.J. Goh, S.R. Schofield, F.J. Ruess and R.G. Clark,
(2002).

[5] One-dimensional ballistic conductors under high pressure in COMMAD 2002 PROCEEDINGS,
R. Newbury, R. Wirtz, J. Cochrane, N.T. Kemp, J.T. Nicholls, W.R. Tribe, M.Y. Simmons and M. Pepper,
(2002).

[6] Quantum computing in Impact Science,
M.Y. Simmons,
The Tandem Group (2001).

[7] Construction of a silicon-based solid state quantum computer in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
A.S. Dzurak, R.G. Clark, A.R. Hamilton, D.N. Jamieson, G.J. Milburn, M. Neilsen, S. Prawer, H. Rubinsztein-Dunlop and M.Y. Simmons,
(2001).

[8] Fermi-liquid behaviour of 2D systems near the crossover from 'metal' to 'insulator' in Electronic Correlations: From Meso- to Nano-Physics,
A.K. Savchenko, Y.Y. Proskuryakov, S.S. Safanov, S.H. Roshko, M. Pepper, M.Y. Simmons, D.A. Ritchie, A.G. Pogosov and Z.D. Kvon,
(2001).

[9] Observation of phosphorus atoms on silicon surfaces in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
S.R. Schofield, J.L. O'Brien, M.Y. Simmons, N.J. Curson, R.G. Clark, I. Andrienko and S. Prawer,
(2001).

[10] Phosphorus qubit arrays in silicon in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown,
(2001).

[11] STM investigation of silicon surfaces for fabrication of the kane quantum computer in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
S.R. Schofield, J.L. O'Brien, M.Y. Simmons, R.G. Clark, A.S. Dzurak, B.E. Kane, M.E. Hawley, G.W. Brown and N.J. Curson,
(2001).

[12] The atomic fabrication of a silicon based quantum computer in PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY,
M.Y. Simmons, S.R. Schofield, J.L. O'Brien, N.J. Curson, R.G. Clark, T.M. Buehler, R.P. McKinnon, R. Brenner, D.J. Reilly, A.S. Dzurak and A.R. Hamilton,
(2001).