Centre Related Publications

Journal Articles


[1] Reaction pathways for pyridine adsorption on silicon (001), J.M. Bennett, N.A. Marks, J.A. Miwa, G.P. Lopinski, F. Rosei, D.R. McKenzie and O. Warschkow, Journal Of Physics: Condensed Matter 27, 54001 (2015).

[2] Electronic structure of two interacting phosphorus δ-doped layers in silicon, D.J. Carter, O. Warschkow, N.A. Marks and D.R. McKenzie, Physical Review B 87, 45204 (2013).

[3] Molecular adsorption on silicon (001): A systematic evaluation of size effects in slab and cluster models, D.F. Tracey, B. Delley, D.R. McKenzie and O. Warschkow, Aip Advances 3, 042117 (2013).

[4] Electronic structure of phosphorus and arsenic delta-doped germanium, D.J. Carter, O. Warschkow, J.D. Gale, G. Scappucci, W.M. Klesse, G. Capellini, A.L. Rohl, M.Y. Simmons, D.R. McKenzie and N.A. Marks, Physical Review B 88, 115203 (2013).

[5] n-Type doping of germanium from phosphine: early stages resolved at the atomic level, G. Scappucci, O. Warschkow, G. Capellini, W.M. Klesse, D.R. McKenzie and M.Y. Simmons, Physical Review Letters 109, 076101 (2012).

[6] Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects, D.J. Carter, N.A. Marks, O. Warschkow and D.R. McKenzie, Nanotechnology 22, 065701 (2011).

[7] Pathways for thermal phosphorus desorption from the silicon (001) surface, J.M. Bennett, O. Warschkow, N.A. Marks and D.R. McKenzie, Physical Review B 82, 235417 (2010).

[8] Comment on ‘‘Transformation of C-type defects on Si(100)-2x1 surface at room temperature STM/STS study", O. Warschkow, N.A. Marks, S.R. Schofield, M.W. Radny, P.V. Smith and D.R. McKenzie, Surface Science 604, 235 (2010).

[9] Diffusion pathways of phosphorus atoms on silicon (001), J.M. Bennett, O. Warschkow, and N.A. Marks and D.R. McKenzie, Physical Review B 79, 165311 (2009).

[10] Electronic structure models of delta-doped silicon, D.J. Carter, O. Warschkow, N.A. Marks and D.R. McKenzie, Physical Review B 80, 49901 (2009).

[11] Comment on , O. Warschkow, N.A. Marks, S.R. Schofield, M.W. Radny, P.V. Smith and D.R. McKenzie, Surface Science 604, 238 (2009).

[12] Water on Silicon (001): C-defects and Initial Steps of Surface Oxidation, O. Warschkow, S.R. Schofield, N.A. Marks, N.W. Radny, P.V. Smith and D.R. McKenzie, Physical Review B (rapid Communication) 77, 201305 (2008).

[13] Single hydrogen atom on the Si(001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.F. Wilson, S.R. Schofield, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Physical Review B 76, 155302 (2007).

[14] Single P and As dopants in the Si(001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.Q. Shi, D.R. McKenzie, S.R. Schofield, N.J. Curson and M.Y. Simmons, Journal Of Chemical Physics 127, 184706 (2007).

[15] Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds, T.C.G. Reusch, M.W. Radny, P.V. Smith, O. Warschkow, N.A. Marks, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Journal Of Physical Chemistry C 111, 6428 (2007).

[16] Doping and STM tip-induced changes to dangling bonds on Si(001), T.C.G. Reusch, O. Warschkow, M.W. Radny, P.V. Smith, N.A. Marks, N.J. Curson, D.R. McKenzie and M.Y. Simmons, Surface Science 601, 4036 (2007).

[17] Importance of charging in atomic resolution scanning tunneling microscopy: Study of a single phosphorus atom in Si (001) surface, M.W. Radny, P.V. Smith, T.C.G. Reusch, O. Warschkow, N.A. Marks, H.F. Wilson, N.J. Curson, S.R. Schofield, D.R. McKenzie and M.Y. Simmons, Physical Review B 74, 113311 (2006).

[18] Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale, S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny, D.R. McKenzie and R.G. Clark, Journal Of Physical Chemistry B 110, 3173 (2006).

[19] Atomic-scale observation and control of the reaction of phosphine with silicon, S.R. Schofield, N.J. Curson, M.Y. Simmons, O. Warschkow, N.A. Marks, H.F. Wilson, and D.R. McKenzie, P.V. Smith and M.W. Radny, Electronic Journal Of Surface Science And Nanotechology 4, 609 (2006).

[20] Thermal dissociation and desorption of PH3 on Si(001): A reinterpretation of spectroscopic data, H.F. Wilson, O. Warschkow, N.A. Marks, N.J. Curson, S.R. Schofield, T.C.G. Reusch, M.R. Radny, P.V. Smith, D.R. McKenzie and M.Y. Simmons, Physical Review B 74, 195310 (2006).

[21] P2 dimer implantation in silicon: A molecular dynamics study, H.F. Wilson, S. Prawer, P.G. Spizzirri, D.N. Jamieson, N. Stavrias and D.R. McKenzie, Nuclear Instruments And Methods In Physics Research B: Beam Interactions With Materials And Atoms 251, 395 (2006).

[22] Characterization of a large area scanning PECVD deposition system with small size RF electrodes, Y. Yin, L. Hang, M. Proschek, D.R. McKenzie, M.M.M. Bilek, J. Han, S. Allan, S. Rubanov, R.D.T. Lauder and R.B. Godfrey, Thin Solid Films 515, 307 (2006).

[23] Phosphine adsorption and dissociation on the Si(001) Surface: An Ab Initio survey of structures, O. Warschkow, H.F. Wilson, N.A. Marks, S.R. Schofield, N.J. Curson, P.V. Smith, M.W. Radny, D.R. McKenzie and M.Y. Simmons, Physical Review B 72, 125328 (2005).

[24] Defect-induced dimer pinning on the Si(0 0 1) surface, H.F. Wilson, D.R. McKenzie and N.A. Marks, Surface Science 587, 185 (2005).

[25] Towards the routine fabrication of P in Si nanostructures: Understanding P precursor molecules on Si(001), S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny and D.R. McKenzie, Materials Research Society Symposium Proceedings 864, 159 (2005).

[26] Towards the routine fabrication of P in Si nanostructures: Understanding P precursor molecules on Si(001), S.R. Schofield, N.J. Curson, O. Warschkow, N.A. Marks, H.F. Wilson, M.Y. Simmons, P.V. Smith, M.W. Radny and D.R. McKenzie, Semiconductor Defect Engineering-materials, Synthetic Structures And Devices 864, 159 (2005).

[27] Phosphine dissociation pinning on the Si(001) surface, H.F. Wilson, O. Warschkow N.A. Marks, S.R. Schofield, N.J. Curson, P.V. Smith, M.W. Radny, D.R. McKenzie and M.Y. Simmons, Physical Review Letters 93, 226102 (2004).

[28] Molecular Dynamics simulations of ion implantation for the fabrication of a solid-state quantum computer, H.F. Wilson, N.A. Marks and D.R. McKenzie and K.H. Lee, Nuclear Instruments And Methods In Physics Research Section B 215, 99 (2004).

Book Citations