Centre Related Publications

Journal Articles


[1] Electrically controlling single-spin qubits in a continuous microwave field, A. Laucht, J.T. Muhonen, F.A. Mohiyaddin, R. Kalra, J.P. Dehollain, S. Freer, F.E. Hudson, M. Veldhorst, R. Rahman, G. Klimeck, K.M. Itoh, D.N. Jamieson, J.C. McCallum, A.S. Dzurak and A. Morello, Science Advances 1, e1500022 (2015).

[2] Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking, J.T. Muhonen, A. Laucht, S. Simmons, J.P. Dehollain, R. Kalra, F.E. Hudson, S. Freer, K.M. Itoh, D.N. Jamieson, J.C. McCallum, A.S. Dzurak and A. Morello, Journal Of Physics-condensed Matter 27, 154205 (2015).

[3] Single atom devices by ion implantation, J. van Donkelaar, C. Yang, A.D.C. Alves, J.C. McCallum, C. Hougaard, B.C. Johnson, F.E. Hudson, A.S. Dzurak, A. Morello, D. Spemann and D.N. Jamieson, Journal Of Physics: Condensed Matter 27, 154204 (2015).

[4] A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures, W.E. Purches, A. Rossi, R. Zhao, S. Kafanov, T.L. Duty, A.S. Dzurak, S. Rogge and G.C. Tettamanzi, Applied Physics Letters 107, 063503 (2015).

[5] Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise, M.A. Fogarty, M. Veldhorst, R. Harper, C.H. Yang, S.D. Bartlett, S.T. Flammia and A.S. Dzurak, Physical Review A 92, 022326 (2015).

[6] A two qubit logic gate in silicon, M. Veldhorst, C.H. Yang, J.C.C. Hwang, W. Huang, J.P. Dehollain, J.T. Muhonen, S. Simmons, A. Laucht, F.E. Hudson, K.M. Itoh, A. Morello and A.S. Dzurak, Nature 526, 410 (2015).

[7] High-fidelity adiabatic inversion of a P-31 electron spin qubit in natural silicon, A. Laucht, R. Kalra, J.T. Muhonen, J.P. Dehollain, F.A. Mohiyaddin, F.E. Hudson, J.C. McCallum, D.N. Jamieson, A.S. Dzurak and A. Morello, Applied Physics Letters 104, 092115 (2014).

[8] Single-shot readout and relaxation of singlet and triplet states in exchange-coupled P31 electron spins in silicon, J.P. Dehollain, J.T. Muhonen, K.Y. Tan, A. Saraiva, D.N. Jamieson, A.S. Dzurak and A. Morello, Physical Review Letters 112, 236801 (2014).

[9] An accurate single-electron pump based on a highly tunable silicon quantum dot, A. Rossi, T. Tanttu, K.Y. Tan, I. Iisakka, R. Zhao, K.W. Chan, G.C. Tettamanzi, S. Rogge, A.S. Dzurak and M. Möttönen , Nano Letters 14, 3405 (2014).

[10] Storing quantum information for 30 seconds in a nanoelectronic device, J.T. Muhonen, J.P. Dehollain, A. Laucht, F.E. Hudson, T. Sekiguchi, K.M. Itoh, D.N. Jamieson, J.C. McCallum, A.S. Dzurak, A. Morello, Nature Nanotechnology 9, 986 (2014).

[11] An addressable quantum dot qubit with fault-tolerant control fidelity, M. Veldorst, J.C.C. Hwang, C.H. Yang, A.W. Leenstra, B. de Ronde, J.P. Dehollain, J.T. Muhonen, F.E. Hudson, K.M. Itoh, A. Morello and A.S. Dzurak, Nature Nanotechnology 9, 981 (2014).

[12] Charge offset stability in Si single electron devices with Al gates, N.M. Zimmerman, C.Yang, N.S. Lai, W.H. Lim and A.S. Dzurak, Nanotechnology 25, 405201 (2014).

[13] Charge state hysteresis in semiconductor quantum dots, C.H. Yang, A. Rossi, N.S. Lai, R. Leon, W.H. Lim, and A.S. Dzurak, Applied Physics Letters 105, 183505 (2014).

[14] Sub-nanoampere one-shot single electron transistor readout electrometry below 10 Kelvin , K. Das, T. Lehmann and A.S. Dzurak, Ieee Transactions On Circuits And Systems 61, 10 (2014).

[15] Coherent control of a single 29Si nuclear spin qubit , J.J. Pla, F.A. Mohiyaddin, K.Y. Tan, J.P. Dehollain, R. Rahman, G. Klimeck, D.N. Jamieson, A.S. Dzurak and A. Morello, Physical Review Letters 113, 246801 (2014).

[16] Quantum spintronics: Engineering and manipulating atom-like spins in semiconductors, D.D. Awschalom, L.C. Bassett, A.S. Dzurak, E.L. Hu and J.R. Petta, Science 339, 1174 (2013).

[17] Nanoscale broadband transmission lines for spin qubit control, J.P. Dehollain, J.J. Pla, E. Siew, K.Y. Tan A.S. Dzurak and A. Morello, Nanotechnology 24, (2013).

[18] High-fidelity readout and control of a nuclear spin qubit in silicon, J.J. Pla, K.Y. Tan, J.P. Dehollain, W.H. Lim, J.J.L. Morton, F.A. Zwanenburg, D.N. Jamieson, A.S. Dzurak and A. Morello, Nature 496, 334 (2013).

[19] Noninvasive spatial metrology of single-atom devices, F.A. Mohiyaddin, R. Rahman, R. Kalra, G. Klimeck, L.C.L. Hollenberg, J.J. Pla, A.S. Dzurak and A. Morello, Nano Letters 13, 1903 (2013).

[20] Printed circuit board metal powder filters for low electron temperatures, F. Mueller, R.N. Schouten, M. Brauns, T. Gang, W.H. Lim, N.S. Lai, A.S. Dzurak, W.G. van der Wiel and F.A. Zwanenburg, Review Of Scientific Instruments 84, 044706 (2013).

[21] Silicon quantum electronics, F.A. Zwanenburg, A.S. Dzurak, A. Morello, M.Y. Simmons, L.C.L. Hollenberg, G. Klimeck, S. Rogge, S.N. Coppersmith and M.A. Eriksson, Reviews Of Modern Physics 85, 961 (2013).

[22] Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting, C.H. Yang, A. Rossi, R. Ruskov, N.S. Lai, F.A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello and A.S. Dzurak, Nature Communications 4, 2069 (2013).

[23] Coulomb interaction and valley-orbit coupling in Si quantum dots, L. Jiang, C.H. Yang, Z. Pan, A. Rossi, A.S. Dzurak and D. Culcer, Physical Review B 88, 085311 (2013).

[24] Single hole transport in a silicon metal-oxide-semiconductor quantum dot, R. Li, F.E. Hudson, A.S. Dzurak and A. R. Hamilton, Applied Physics Letters 103, 163508 (2013).

[25] Orbital and valley state spectra of a few-electron silicon quantum dot, C.H. Yang, W.H. Lim, N.S. Lai, A. Morello and A.S. Dzurak, Physical Review B 86, 115319 (2012).

[26] A single-atom electron spin qubit in silicon, J.J. Pla, K.Y. Tan, J.P. Dehollain, W-H. Lim, J.J.L. Morton, D.N. Jamieson, A.S. Dzurak and A. Morello, Nature 489, 541 (2012).

[27] Single-electron shuttle based on a silicon quantum dot, K.W. Chan, M. Mottonen, A. Kemppinen, N.S. Lai, K.Y. Tan, W.H. Lim and A.S. Dzurak, Applied Physics Letters 98, 212103 (2011).

[28] Spin filling of valley-orbit states in a silicon quantum dot, W.H. Lim, C.H. Yang, F.A. Zwanenburg and A.S. Dzurak, Nanotechnology 22, 335704 (2011).

[29] Quantum computing: Diamond and silicon converge, A.S. Dzurak, Nature 479, 47 (2011).

[30] Dynamically controlled charge sensing of a few-electron silicon quantum dot, C.H. Yang, W.H. Lim, F.A. Zwanenburg and A.S. Dzurak, Aip Advances 1, 042111 (2011).

[31] Pauli spin blockade in a highly tunable silicon double quantum dot, N.S. Lai, W.H. Lim, C.H. Yang, F.A. Zwanenburg, W.A. Coish, F. Qassemi, A. Morello and A.S. Dzurak, Scientific Reports 1, 110 (2011).

[32] Charge sharing in multi-electrode devices for deterministic doping studied by IBIC, L.M. Jong, J.N. Newnham, C. Yang, J.A. Van Donkelaar, F.E. Hudson, A.S. Dzurak and D.N. Jamieson, Nuclear Instruments And Methods In Physics Research Section B: Beam Interactions With Materials And Atoms 269, 2336 (2011).

[33] Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, L.H. Willems Van Beveren, K.Y. Tan, N. Lai, O. Klochan, A.S. Dzurak and A.R. Hamilton, Materials Science Forum 700, 93 (2011).

[34] Characterization of SOI RF-CMOS FETs at ultra-low temperatures for the design of integrated circuits for quantum bit control and readout, S.R. Ekanayake, T. Lehmann, A.S. Dzurak, R.G. Clark and A. Brawley, Ieee Transactions On Electron Devices 57, 539 (2010).

[35] Electron Tunnel rates in a donor-silicon single electron transistor hybrid, H. Huebl, C. Nugroho, A. Morello, C. Escott, M. Eriksson, C. Yang, D.N. Jamieson, R.G. Clark and A.S. Dzurak, Physical Review B 81, 235318 (2010).

[36] Probe and control of the reservoir density of states in single-electron devices, M. Möttönen, K.Y. Tan, K.W. Chan, F.A. Zwanenburg, W. H. Lim, C.C. Escott, J.-M. Pirkkalainen, A. Morello, C. Yang, J.A. van Donkelaar, A.D.C. Alves, D.N. Jamieson, L.C.L. Hollenberg, and A.S. Dzurak, Physical Review B (rapid Communications) 81, 161304 (2010).

[37] Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime, L.H. Willems van Beveren, K.Y. Tan, N.S. Lai, A.S. Dzurak and A.R. Hamilton, Applied Physics Letters 97, 152102 (2010).

[38] Electrostatically defined few-electron double quantum dot in silicon, W.H. Lim, H. Huebl, L.H. Willems van Beveren, S. Rubanov, P.G. Spizzirri, S.J. Angus, R.G. Clark and A.S. Dzurak, Applied Physics Letters 94, 173502 (2009).

[39] Observation of the single-electron regime in a highly tunable silicon quantum dot, W.H. Lim, F.A. Zwanenburg, H. Huebl, M. Mottonen, K.W. Chan, A. Morello and A.S. Dzurak, Applied Physics Letters 95, 242102 (2009).

[40] Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon, A. Morello, C.C. Escott, H. Huebl, L.H. Willems van Beveren, L.C.L. Hollenberg, D.N. Jamieson, A.S. Dzurak and R.G. Clark, Physical Review B (rapid Communication) 80, 81307 (2009).

[41] A silicon radio-frequency single electron transistor, S.J. Angus, A.J. Ferguson, A.S. Dzurak and R.G. Clark, Applied Physics Letters 92, 112103 (2008).

[42] Low-noise detection system for the counted implantation of single ions in silicon, T. Hopf, C. Yang, S.M. Hearne, D.N. Jamieson, E. Gauja, S.E. Andresen and A.S. Dzurak, Ieee Transactions On Nuclear Science 55, 812 (2008).

[43] Gate-controlled charge transfer in Si:P double quantum dots, F.E. Hudson, A.J. Ferguson, C.C. Escott, C. Yang, D.N. Jamieson, R.G. Clark and A.S. Dzurak, Nanotechnology 19, 195402 (2008).

[44] Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots, M. Mitic, K.D. Petersson, M.C. Cassidy, R.P. Starrett, E. Gauja, A.J. Ferguson, C. Yang, D.N. Jamieson, R.G. Clark and A.S. Dzurak, Nanotechnology 19, 265201 (2008).

[45] Charge state control and relaxation in an atomically precise phosphorus doped silicon device, S.E. Andresen, R. Brenner, C.J. Wellard, C. Yang, T. Hopf, C.C. Escott, R.G. Clark, A.S. Dzurak, D.N. Jamieson and L.C.L. Hollenberg, Nano Letters 7, 2000 (2007).

[46] Gate-Defined Quantum Dots in Intrinsic Silicon, S.J. Angus, A.J. Ferguson, A.S. Dzurak and R.G. Clark, Nano Letters 7, 2051 (2007).

[47] Single shot charge detection using a radio-frequency quantum point contact, M.C. Cassidy, A.S. Dzurak, R.G. Clark, K.D. Petersson, I. Farrer, D.A. Ritchie and C.G. Smith, Pplied Physics Letters 91, 222104 (2007).

[48] Scaling of ion implanted Si:P single electron devices, C.C. Escott, F.E. Hudson, V.C. Chan, K.D. Petersson, R.G. Clark and A.S. Dzurak, Nanotechnology 18, 235401 (2007).

[49] Controlled single electron transfer between Si:P dots, T.M. Buehler, V. Chan, A.J. Ferguson, A.S. Dzurak, F.E. Hudson, D.J. Reilly, A.R. Hamilton, R.G. Clark, D.N. Jamieson, C. Yang, C.I. Pakes and S. Prawer, Applied Physics Letters 88, 192101 (2006).

[50] Ion implanted Si:P double dot with gate tunable interdot coupling, V.C. Chan, T.M. Buehler, A.J. Ferguson, D.R. McCamey, D.J. Reilly, A.S. Dzurak, R.G. Clark, C. Yang and D.N. Jamieson, Journal Of Applied Physics 100, 106104 (2006).

[51] Coulomb blockade in a nanoscale phosphorus-in-silicon island, F.E. Hudson, A.J. Ferguson, C. Yang, D.N. Jamieson, A.S. Dzurak and R.G. Clark, Microelectronic Engineering 83, 1809 (2006).

[52] Quantum effects in ion implanted devices, D.N. Jamieson, V. Chan, F.E. Hudson, S.E. Andresen, C. Yang, T. Hopf, S.M. Hearne, C.I. Pakes, S. Prawer, E. Gauja, A.S. Dzurak and R.G. Clark, Nuclear Instruments And Methods In Physics Research B 249, 221 (2006).

[53] Demonstration of a silicon-based quantum cellular automata cell, M. Mitic, M.C. Cassidy, K.D. Petersson, R.P. Starrett, E. Gauja, R. Brenner, R.G. Clark, A.S. Dzurak, C. Yang and D.N. Jamieson, Applied Physics Letters 89, 13503 (2006).

[54] Single-shot readout with the radio frequency single electron transistor in the presence of charge noise, T.M. Buehler, D.J. Reilly, R.P. Starrett, A.D. Greentree, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Applied Physics Letters 86, 143117 (2005).

[55] Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation, T. Hopf , D.N. Jamieson, S.M. Hearne, C. Yang, C.I. Pakes, A.S. Dzurak, E. Gauja and R.G. Clark, Nuclear Instruments And Methods In Physics Research Section B 231, 463 (2005).

[56] Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions, D.N. Jamieson, C. Yang, T. Hopf, S.M. Hearne, C.I. Pakes, S. Prawer, M. Mitic, E. Gauja, S.E. Andresen, F.E. Hudson, A.S. Dzurak and R.G. Clark, Applied Physics Letters 86, 202101 (2005).

[57] Modeling Single Electron Transfer in Si:P Double Quantum Dots, K.H. Lee, A.D. Greentree, J.P. Dinale, C.C. Escott, A.S. Dzurak and R.G. Clark, Nanotechnology 16, 74 (2005).

[58] Single atom Si nanoelectronics using controlled single-ion implantation, M. Mitic, S.E. Andresen, C. Yang, T. Hopf, V. Chan, E. Gauja, F.E. Hudson, T.M. Buehler, R. Brenner, A.J. Ferguson, C.I. Pakes, S.M. Hearne, G. Tamanyan, D.J. Reilly, A.R. Hamilton, D.N. Jamieson, A.S. Dzurak and R.G. Clark, Microelectronic Engineering 78, 279 (2005).

[59] Development and operation of the twin radio frequency single electron transistor for cross-correlated charge detection, T.M. Buehler, D.J. Reilly, R.P. Starrett, N.A. Court, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Journal Of Applied Physics 96, 4508 (2004).

[60] Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, T.M. Buehler, D.J. Reilly, R.P. Starrett, V.C. Chan, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Ournal Of Applied Physics 96, 6827 (2004).

[61] Charge-based quantum computing using single donors in semiconductors, L.C.L. Hollenberg, A.S. Dzurak, C. Wellard, A.R. Hamilton, D.J. Reilly, G.J. Milburn and R.G. Clark, Physical Review B 69, 113301 (2004).

[62] Double-island single-electron transistor for noise-suppressed detection of charge transfer, R. Brenner, A.R. Hamilton, R.G. Clark and A.S. Dzurak, Microelectronic Engineering 67, 826 (2003).

[63] Correlated charge detection for read-out of a solid-state quantum computer, T.M. Buehler, D.J. Reilly, R. Brenner, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Applied Physics Letters 82, 577 (2003).

[64] The twin radio frequency single electron transistor for correlated charge detection on microsecond time-scales, T.M. Buehler, D. J. Reilly, R.P. Starrett, S. Kenyon, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Special Issue Of Microelectronic Engineering 67, 775 (2003).

[65] Single electron devices for simulating read-out in a solid-state quantum computer, T.M. Buehler, D.J. Reilly, R.P. Starrett, N. Court, A.R. Hamilton, R. Brenner, A.S. Dzurak and R.G. Clark, Surface Science 532, 1199 (2003).

[66] Progress in silicon-based quantum computing, R.G. Clark, R. Brenner, T.M. Buehler, V. Chan, N.J. Curson, A.S. Dzurak, E. Gauja, H-S. Goan, A.D. Greentree, T. Hallam, A.R. Hamilton, L.C.L. Hollenberg, D.N. Jamieson, J.C. McCallum, G.J. Milburn, J.L. O'Brien, L. Oberbeck, C.I. Pakes, S. Prawer, D.J. Reilly, F.J. Ruess, S.R. Schofield, M.Y. Simmons, F.E. Stanley, R.P. Starrett, C. Wellard and C. Yang, Philosophical Transactions Of The Royal Society Of London A 361, 1451 (2003).

[67] TCAD modelling of ion beam induced charge collection in silicon Schottky barrier devices, S.M. Hearne, D.N. Jamieson, C.Yang and A.S. Dzurak, Nuclear Instruments And Methods In Physics Research B 210, 181 (2003).

[68] Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures, C.I. Pakes, D.P. George, C.J. Yang, D.N. Jamieson, A.S. Dzurak and R.G. Clark, Nanotechnology 14, 157 (2003).

[69] Modelling single-electron-transistor-based readout in the Kane solid-state quantum computer, C.I. Pakes, V. Conrad, J.C. Ang, F. Green, A.S. Dzurak, L.C.L. Hollenberg, D.N. Jamieson and R.G. Clark, Nanotechnology 14, 161 (2003).

[70] IBIC Characterisation of Novel Detectors for Single Atom Doping of Quantum Computer Devices, C.J. Yang, D.N. Jamieson, C.I. Pakes, D.P. George, S.M. Hearne, A.S. Dzurak, E.Gauja, F.E. Stanley and R.G. Clark, Nuclear Instruments & Methods In Physics Research Section 210, 186 (2003).

[71] Single phosphorous ion implantation into prefabricated nanometre cells of silicon devices for quantum bit fabrication, C.J. Yang, D.N. Jamieson, C.I. Pakes, S. Prawer, A.S. Dzurak, F.E. Stanley, P. Spizziri, L. Macks, E. Gauja and R.G. Clark, The Japanese Journal Of Applied Physics 42, 4124 (2003).

[72] Self-aligned fabrication process for silicon quantum computer devices, T.M. Buehler, R.P. McKinnon, N.E. Lumpkin, R. Brenner, D.J. Reilly, L.D. Macks, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Nanotechnology 13, 686 (2002).

[73] Single-electron transistor architectures for charge motion detection in solid-state quantum computer devices, T.M. Buehler, R. Brenner, D.J. Reilly, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Smart Materials And Structures 11, 749 (2002).

[74] Toward a silicon-based nuclear-spin quantum computer, R.G. Clark, P.C. Hammel, A.S. Dzurak, A.R. Hamilton, L.C.L. Hollenberg, D.N. Jamieson and C.I. Pakes, Los Alamos Science 27, 284 (2002).

[75] Nanofabrication processes for single-ion implantation of silicon quantum computer devices, R.P. McKinnon, F.E. Stanley, E. Gauja, L.D. Macks, M. Mitic, V. Chan, K. Peceros, T.M. Buehler, A.S. Dzurak, R.G. Clark, C. Yang, D.N. Jamieson and S.D. Prawer, Smart Materials And Structures 11, 735 (2002).

[76] Nanoscale fabrication using single-ion impacts, V. Millar, C.I. Pakes, A. Cimmino, D. Brett, D.N. Jamieson, S. Prawer, C.J. Yang, B. Rout, R.P. McKinnon, A.S. Dzurak and R.G. Clark, Smart Materials And Structures 11, 686 (2002).

[77] Scanning tunnelling microscope fabrication of arrays of phosphorus atom qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Smart Materials And Structures 11, 741 (2002).

[78] Modelling of electrostatic gate operations in the Kane solid state quantum computer, C.I. Pakes, C.J. Wellard, D.N. Jamieson, L.C.L. Hollenberg, S. Prawer, A.S. Dzurak, A.R. Hamilton and R.G. Clark, Microelectronics Journal 33, 1053 (2002).

[79] Density-dependent spin polarization in ultra-low-disorder quantum wires, D.J. Reilly, T.M. Buehler, J.L. O'Brien, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Physical Review Letters 89, 246801 (2002).

[80] Ion beam induced charge characterisation of particle detectors, C.J. Yang, D.N. Jamieson, S.M. Hearne, C.I. Pakes, B. Rout, E. Gauja, A.S. Dzurak and R.G. Clark, Nuclear Instruments & Methods In Physics Research Section B: Beam Interactions With Materials & Atoms 190, 212 (2002).

[81] Nanoscale single-electron transistor architectures for single spin detection in solid-state quantum computer devices, T.M. Buehler, R. Brenner, D.J. Reilly, A.R. Hamilton, A.S. Dzurak and R.G. Clark, Biomems And Smart Nanostructures 4590, 329 (2001).

[82] Construction of a silicon-based solid state quantum computer, A.S. Dzurak, M.Y. Simmons, A.R. Hamilton, R.G. Clark, R. Brenner, T.M. Buehler, N.J. Curson, E. Gauja, R.P. McKinnon, L.D. Macks, M. Mitic, J.L. O'Brien, L. Oberbeck, D.J. Reilly, S.R.Schofield, F.E. Stanley, D.N. Jamieson, S. Prawer, C. Yang and G.J. Milburn, Quantum Information And Computation 1, 82 (2001).

[83] Nanofabrication processes for single-ion implantation of silicon quantum computer devices, R.P. McKinnon, F.E. Stanley, T.M. Buehler, E. Gauja, K. Peceros, L.D. Macks, M. Mitic, V. Chan, A.S. Dzurak, R.G. Clark, C. Yang, D.N. Jamieson and S. Prawer, Biomems And Smart Nanostructures 4590, 310 (2001).

[84] Nanoscale fabrication using single ion impacts, V. Millar, C.I. Pakes, A. Cimmino, D. Brett, D.N. Jamieson, S. Prawer, C. Yang, B. Rout, R.P. McKinnon, A.S. Dzurak and R.G. Clark, Biomems And Smart Nanostructures 4590, 173 (2001).

[85] Towards the fabrication of phosphorus qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Physical Review B: Rapid Communications 64, 1614 (2001).

[86] Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Biomems And Smart Nanostructures 4590, 299 (2001).

[87] Modelling of electrostatic gate operations in the Kane solid state quantum computer, C.I. Pakes, C.J. Wellard, D.N. Jamieson, L.C.L. Hollenberg, S. Prawer, A.S. Dzurak, A.R. Hamilton and R.G. Clark, Biomems And Smart Nanostructures 4590, 70 (2001).

[88] Many-body spin related phenomena in ultra-low disorder quantum wires, D.J. Reilly, G.R. Facer, A.S. Dzurak, B.E. Kane, P.J. Stiles, R.G. Clark, A.R. Hamilton, J.L. O'Brien, N.E. Lumpkin, L.N. Pfeiffer and K.W. West, Physics Review B Rapid Communication 63, 121311(R) (2001).

[89] Quantum measurement of coherent tunneling between quantum dots, H.M. Wiseman, D.W. Utami, H.B. Sun, G.J. Milburn, B.E. Kane, A.S. Dzurak and R.G. Clark, Physical Review B 63, 235308 (2001).

[90] Towards the fabrication of phosphorus qubits for a silicon quantum computer, J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown, Physical Review B 64, 161401 (2001).

[91] Single-spin measurement using single-electron transistors to probe two-electron systems, B.E. Kane, N.S. McAlpine, A.S. Dzurak, R.G. Clark, G.J. Milburn, H.B. Sun and H. Wiseman, Physical Review B 61, 2961 (2000).

[92] Experimental determination of the B-T phase diagram of YBa2Cu3O7-δ to 150T for B⟂c, J.L. O'Brien, H. Nakagawa, A.S. Dzurak, R.G. Clark, B.E. Kane, N.E. Lumpkin, N. Muira, E.E. Mitchell, J.D. Goettee, J.S. Brooks, D.G. Rickel, and R.P. Starrett, Physical Review B 61, 1584 (2000).

Book Citations


[1] Construction of a silicon-based solid state quantum computer in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
A.S. Dzurak, R.G. Clark, A.R. Hamilton, D.N. Jamieson, G.J. Milburn, M. Neilsen, S. Prawer, H. Rubinsztein-Dunlop and M.Y. Simmons,
(2001).

[2] Phosphorus qubit arrays in silicon in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G. Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley and G.W. Brown,
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[3] STM investigation of silicon surfaces for fabrication of the kane quantum computer in EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION,
S.R. Schofield, J.L. O'Brien, M.Y. Simmons, R.G. Clark, A.S. Dzurak, B.E. Kane, M.E. Hawley, G.W. Brown and N.J. Curson,
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[4] The atomic fabrication of a silicon based quantum computer in PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY,
M.Y. Simmons, S.R. Schofield, J.L. O'Brien, N.J. Curson, R.G. Clark, T.M. Buehler, R.P. McKinnon, R. Brenner, D.J. Reilly, A.S. Dzurak and A.R. Hamilton,
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