Centre Related Publications

Journal Articles


[1] Donor hyperfine stark shift and the role of central-cell corrections in tight-binding theory, M. Usman, R. Rahman, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, G. Klimeck and L.C.L Hollenberg, Journal Of Physics: Condensed Matter 27, 154207 (2015).

[2] Single dopants in semiconductors Preface, S.R. Schofield and S. Rogge, Journal Of Physics: Condensed Matter 27, 150301 (2015).

[3] Spatially resolved resonant tunneling on single atoms in silicon, B. Voisin, J. Salfi, J. Bocquel, R. Rahman and S. Rogge, Journal Of Physics: Condensed Matter 27, 154203 (2015).

[4] Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, J.A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J.A. Miwa, G. Klimeck, M.Y. Simmons and S. Rogge , Applied Physics Letters 106, 203110 (2015).

[5] Strain and electric field control of hyperfine interactions for donor spin qubits in silicon, M. Usman, C.D. Hill, R. Rahman, G. Klimeck, M.Y. Simmons, S. Rogge and L.C.L. Hollenberg, Physical Review B 91, 245209 (2015).

[6] A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures, W.E. Purches, A. Rossi, R. Zhao, S. Kafanov, T.L. Duty, A.S. Dzurak, S. Rogge and G.C. Tettamanzi, Applied Physics Letters 107, 063503 (2015).

[7] Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, S.J. Hile, M.G. House, E. Peretz, J. Verduijn, D. Widmann, T. Kobayashi, S. Rogge and M.Y. Simmons, Applied Physics Letters 107, 93504 (2015).

[8] A surface code quantum computer in silicon, C. Hill, E. Peretz, S. Hile, M. Fuechsle, M.H. House, R. Rahman, G. Klimeck, S. Rogge, M.Y. Simmons and L.C.L. Hollenberg, Science Advances 1, e1500707 (2015).

[9] Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots, M.G. House, T. Kobayashi, B. Weber, S.J. Hile, T.F. Watson, J. van der Heijden, S. Rogge and M.Y. Simmons, Nature Communications 6, (2015).

[10] Radio-frequency dispersive detection of donor atoms in a field-effect transistor, J. Verduijn, M. Vinet and S. Rogge, Applied Physics Letters 104, 102107 (2014).

[11] Spatially resolving valley quantum interference of a donor in silicon, J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg and S. Rogge, Nature Materials 13, 605 (2014).

[12] Probing the spin states of a single acceptor atom, J. van der Heijden, J. Salfi, J.A. Mol, J. Verduijn, G.C. Tettamanzi, A.R. Hamilton, N. Collaert and S. Rogge , Nano Letters 14, 1492 (2014).

[13] An accurate single-electron pump based on a highly tunable silicon quantum dot, A. Rossi, T. Tanttu, K.Y. Tan, I. Iisakka, R. Zhao, K.W. Chan, G.C. Tettamanzi, S. Rogge, A.S. Dzurak and M. Möttönen , Nano Letters 14, 3405 (2014).

[14] Charge pumping through a single donor atom, G.C. Tettamanzi, R. Wacquez and S. Rogge, New Journal Of Physics 16, 063036 (2014).

[15] Optical addressing of an individual erbium ion in silicon, C. Yin, M. Rancic, G.G. de Boo, N. Stavrias, J.C. McCallum, M.J. Sellars and S. Rogge, Nature 497, 91 (2013).

[16] Wave function control over a single donor atom, J. Verduijn, G.C. Tettamanzi and S. Rogge, Nano Letters 13, 1476 (2013).

[17] Non-local coupling of two donor-bound electrons, J. Verduijn, R.R. Agundez, M. Blaauboer and S. Rogge, New Journal Of Physics 15, 033020 (2013).

[18] Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants, J.A. Mol, J. Salfi, J.A. Miwa, M.Y. Simmons and S. Rogge, Physical Review B 87, 245417 (2013).

[19] Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, R.R. Agundez, J. Verduijn, S. Rogge and M. Blaauboer, Physical Review B 87, 235407 (2013).

[20] Silicon quantum electronics, F.A. Zwanenburg, A.S. Dzurak, A. Morello, M.Y. Simmons, L.C.L. Hollenberg, G. Klimeck, S. Rogge, S.N. Coppersmith and M.A. Eriksson, Reviews Of Modern Physics 85, 961 (2013).

[21] Transport through a single donor in p-type silicon, J.A. Miwa, J. A. Mol, J. Salfi, S. Rogge and M.Y. Simmons, Applied Physics Letters 103, 043106 (2013).

[22] Atomic clocks in the solid state, S. Rogge and M.J. Sellars, Nature Nanotechnology (news & Views) 8, 544 (2013).

[23] Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade, G.P. Lansbergen, R. Rahman, J. Verduijn, G.C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, Physical Review Letters 110, 049901 (2013).

[24] Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor, G.C. Tettamanzi, J. Verduijn, G.P. Lansbergen, M. Blaauboer, R. Aguado and S. Rogge, Physical Review Letters 108, 046803 (2012).

[25] Few electron limit of n-type metal oxide semiconductor single electron transistors, E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar-Patil, M. Ruoff, D.P. Kern, D.A. Wharam, J. Verduijn, G.C. Tettamanzi, S. Rogge, B. Roche, R. Wacquez, X. Jehl, M. Vinet and M. Sanquer , Nanotechnology 23, 215204 (2012).

[26] Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor, B. Fresch, J. Verduijn, J.A. Mol, S. Rogge and F. Remacle, Europhysics Letters 99, 28004 (2012).

[27] Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs, G.C. Tettamanzi, A. Paul, S. Lee, S.R. Mehrotra, N. Collaert, S. Biesemans, G. Klimeck and S. Rogge, Ieee Electron Devices Letters 32, 440 (2011).

[28] Engineered valley-orbit splittings in quantum-confined nanostructures in silicon, R. Rahman, J. Verduijn, N. Kharche, G.P. Lansbergen, G. Klimeck, L.C.L. Hollenberg and S. Rogge, Physical Review B 83, 195323 (2011).

[29] Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, R. Rahman, G.P. Lansbergen, J. Verduijn, G.C. Tettamanzi, S.H. Park, N. Collaert, S. Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, Physical Review B 84, 115428 (2011).

[30] Lifetime-enhanced transport in silicon due to spin and valley blockade, G. Lansbergen, R. Rahman, J. Verduijn, G. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck and S. Rogge, Physical Review Letters 107, 136602 (2011).

[31] Integrated logic circuits using single-atom transistors, J. Mol, J. Verduijn, R. Levine, F. Remacle and S. Rogge, Proceedings Of The National Academy Of Sciences Of The United States Of America 108, 13969 (2011).

[32] Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, M. Gasseller, M. DeNinno, R. Loo, J.F. Harrison, M. Caymax, S. Rogge and S.H. Tessmer, Nano Letters 11, 5208 (2011).

[33] Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, A. Paul, G.C. Tettamanzi, S. Lee, S. Mehrotra, N. Colleart, S. Biesemans, S. Rogge and G. Klimeck, Journal Of Applied Physics 110, 124507 (2011).

[34] Drain current modulation in a nanoscale field-effecttransistor channel by single dopant implantation, B.C. Johnson, G.C. Tettamanzi, A. Alves, S.C. Thompson, C. Yang, J. Verduijn, J.A. Mol, R. Wacquez, M. Vinet, M. Sanquer, S. Rogge and D. Jamieson, Applied Physics Letters 96, 264102 (2010).

[35] Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, R. Rahman, S.H. Park, T.B. Boykin, G. Klimeck, S. Rogge and L.C.L. Hollenberg, Physical Review B 80, 155301 (2009).

[36] Orbital Stark effect and quantum confinement transition of donors in silicon, R. Rahman, G.P. Lansbergen, S.H. Park, J. Verduijn, G. Klimeck, S. Rogge and L.C.L. Hollenberg, Physical Review B 80, 165314 (2009).

[37] Gate-induced quantum confinement transition of a single dopant atom in a Si FinFET, G.P. Lansbergen, R. Rahman, C.J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, Nature Physics 4, 656 (2008).

[38] Transport spectroscopy of a single atom in a FinFET, G.P. Lansbergen, R. Rahman, J. Caro, S. Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, Journal Of Physics: Conference Series 109, 12003 (2008).

Book Citations